公开(公告)号：US20230299149A1

公开(公告)日：2023-09-21

申请号：US18325335

申请日：2023-05-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sahwan HONG ,  Hanki LEE ,  Jeongmin LEE

IPC: H01L29/167 ,  H01L29/08 ,  H01L29/417

CPC classification number: H01L29/167 ,  H01L29/0847 ,  H01L29/41775

Abstract: A semiconductor device includes an active region on a substrate, a gate structure on the substrate and intersecting the active region, a source/drain region on the active region on both sides of the gate structure and including silicon (Si), and a contact structure on the source/drain region. The source/drain region includes a shallow doping region doped with germanium (Ge) and is in an upper region including an upper surface of the source/drain region. A concentration of germanium (Ge) in the shallow doping region gradually decreases from the upper surface of the source/drain region toward an upper surface of the substrate in a direction that is perpendicular to an upper surface of the substrate.

公开(公告)号：US20230118906A1

公开(公告)日：2023-04-20

申请号：US18085871

申请日：2022-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoontae HWANG ,  Wandon KIM ,  Geunwoo KIM ,  Heonbok LEE ,  Taegon KIM ,  Hanki LEE

IPC: H01L29/45 ,  H01L29/78 ,  H01L29/66 ,  H01L29/417 ,  H01L21/285 ,  H01L29/08 ,  H01L23/532 ,  H01L23/485 ,  H01L23/522

Abstract: A semiconductor device including a substrate; a fin active region on the substrate and extending in a first direction; a gate structure extending across the fin active region and extending in a second direction; a source/drain region in the fin active region on a side of the gate structure; an insulating structure covering the gate structure and the source/drain region; and contact structures penetrating through the insulating structure and respectively connected to the source/drain region and the gate structure, wherein one of the contact structures includes a seed layer on the gate structure or the source/drain regions and including lower and upper regions, the lower region having a first grain size and the upper region being amorphous or having a grain size different from the first grain size, and a contact plug on an upper region of the seed layer and having a second grain size.

公开(公告)号：US20220181446A1

公开(公告)日：2022-06-09

申请号：US17370551

申请日：2021-07-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sahwan HONG ,  Hanki LEE ,  Jeongmin LEE

IPC: H01L29/167 ,  H01L29/417 ,  H01L29/08

Abstract: A semiconductor device includes an active region on a substrate, a gate structure on the substrate and intersecting the active region, a source/drain region on the active region on both sides of the gate structure and including silicon (Si), and a contact structure on the source/drain region. The source/drain region includes a shallow doping region doped with germanium (Ge) and is in an upper region including an upper surface of the source/drain region. A concentration of germanium (Ge) in the shallow doping region gradually decreases from the upper surface of the source/drain region toward an upper surface of the substrate in a direction that is perpendicular to an upper surface of the substrate.

公开(公告)号：US20220069100A1

公开(公告)日：2022-03-03

申请号：US17231126

申请日：2021-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoontae HWANG ,  Wandon KIM ,  Geunwoo KIM ,  Heonbok LEE ,  Taegon KIM ,  Hanki LEE

IPC: H01L29/45 ,  H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L21/285 ,  H01L29/66

Abstract: A semiconductor device including a substrate; a fin active region on the substrate and extending in a first direction; a gate structure extending across the fin active region and extending in a second direction; a source/drain region in the fin active region on a side of the gate structure; an insulating structure covering the gate structure and the source/drain region; and contact structures penetrating through the insulating structure and respectively connected to the source/drain region and the gate structure, wherein one of the contact structures includes a seed layer on the gate structure or the source/drain regions and including lower and upper regions, the lower region having a first grain size and the upper region being amorphous or having a grain size different from the first grain size, and a contact plug on an upper region of the seed layer and having a second grain size.