公开(公告)号：US20250159979A1

公开(公告)日：2025-05-15

申请号：US18606001

申请日：2024-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Panjae PARK ,  Jintae KIM ,  Hyojong SHIN

IPC: H01L27/092 ,  H01L21/822 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

Abstract: Provided is a semiconductor device which includes: a 1st channel structure; a 1st source/drain region and a 2nd source/drain region connected through the 1st channel structure in a 1st direction; a 1st gate structure on the 1st channel structure; a 1st contact structure on the 1st source/drain region and connecting the 1st source/drain region to a voltage source; and a 2nd contact structure on the 2nd source/drain region and connecting the 2nd source/drain region to another circuit element other than a voltage source, wherein a 1st contact area between the 1st contact structure and the 1st source/drain region is greater than a 2nd contact area between the 2nd contact structure and the 2nd source/drain region.