公开(公告)号：US20200082858A1

公开(公告)日：2020-03-12

申请号：US16369869

申请日：2019-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAE HOON KIM ,  Hee Ju Shin ,  Ung Hwan Pi

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12

Abstract: A semiconductor device includes a storage layer including at least one first magnetic layer and a reference layer facing the storage layer and including at least one second magnetic layer. The device also includes a tunnel barrier layer between the storage layer and the reference layer. The device further includes at least one spin-orbit torque line adjacent the storage layer.