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公开(公告)号：US12014762B2
公开(公告)日：2024-06-18
申请号：US17814057
申请日：2022-07-21
发明人： Rahul Mishra , Hyunsoo Yang , Ung Hwan Pi
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1673 , H10B61/20 , H10N50/10 , H10N50/80 , H10N50/85 , H10N52/80 , H10N52/85 , G11C11/1655
摘要： A semiconductor memory device may be provided. The semiconductor memory device may include data storage patterns having respective first sides and respective second sides, a spin-orbit coupling (SOC) channel layer in common contact with the first sides of the data storage patterns, the SOC channel layer is configured to provide a spin-orbit torque to the data storage patterns, read access transistors connected between the second sides of respective ones of the data storage patterns and respective data lines, a write access transistor connected between a first end of the SOC channel layer and a source line, and a bit line connected to a second end of the SOC channel layer. Each of the data storage patterns comprises a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.
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公开(公告)号：US20230298649A1
公开(公告)日：2023-09-21
申请号：US18096161
申请日：2023-01-12
CPC分类号： G11C11/1673 , H10B61/00 , G11C11/1675
摘要： A magnetic memory device includes a conductive line that extends in a first direction, and a magnetic track line that extends in the first direction on a top surface of the conductive line. The conductive line may include a first region having a first width in a second direction, and a second region having a second width in the second direction. The first direction and the second direction are parallel to the top surface of the conductive line and are perpendicular to each other. The second width may be greater than the first width. The magnetic track line includes first domains arranged in the first direction on the first region of the conductive line, and second domains arranged in the first direction on the second region of the conductive line. A size of each of the second domains may be less than a size of each of the first domains.
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公开(公告)号：US11610940B2
公开(公告)日：2023-03-21
申请号：US16897810
申请日：2020-06-10
发明人： Ung Hwan Pi , Dongkyu Lee
IPC分类号： H01L27/22 , H01L23/528 , H01F10/32 , G11C11/16 , H01L43/02
摘要： Disclosed is a magnetic memory device including a first magnetic pattern that extends in a first direction and has a magnetization direction fixed in one direction, and a plurality of second magnetic patterns that extend across the first magnetic pattern. The second magnetic patterns extend in a second direction intersecting the first direction and are spaced apart from each other in the first direction. Each of the second magnetic patterns includes a plurality of magnetic domains that are spaced apart from each other in the second direction.
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公开(公告)号：US11176982B2
公开(公告)日：2021-11-16
申请号：US17039455
申请日：2020-09-30
发明人： Jae Hoon Kim , Hee Ju Shin , Ung Hwan Pi
摘要： A semiconductor device includes a storage layer including at least one first magnetic layer and a reference layer facing the storage layer and including at least one second magnetic layer. The device also includes a tunnel barrier layer between the storage layer and the reference layer. The device further includes at least one spin-orbit torque line adjacent the storage layer.
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公开(公告)号：US20210050383A1
公开(公告)日：2021-02-18
申请号：US16884769
申请日：2020-05-27
发明人： Ung Hwan Pi , Sung Chul Lee , Jangeun Lee
摘要： A magnetic memory device includes a first cell array structure including first and second free magnetic patterns which extend in a first direction parallel to a top surface of a substrate and are spaced apart from each other in a second direction intersecting the first direction, and a second cell array structure including a third free magnetic pattern between the first and second free magnetic patterns and a fourth free magnetic pattern spaced apart from the third free magnetic pattern with the second free magnetic pattern therebetween. The first cell array structure further includes a first transistor region including first transistors connected to the first and second free magnetic patterns. The second cell array structure further includes a second transistor region including second transistors connected to the third and fourth free magnetic patterns. The second transistor region is spaced apart from the first transistor region in the first direction.
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公开(公告)号：US20210050044A1
公开(公告)日：2021-02-18
申请号：US16828429
申请日：2020-03-24
发明人： Sung Chul Lee , Ung Hwan Pi
摘要： A magnetic memory device includes a first magnetic layer extending in a first direction, a second magnetic layer that extends on and parallel to the first magnetic layer, and a conductive layer extending between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first region having magnetic moments oriented in a first rotational direction along the first direction. The second magnetic layer includes a second region having magnetic moments oriented in a second rotational direction along the first direction. The second rotational direction is different from the first rotational direction.
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公开(公告)号：US20230274772A1
公开(公告)日：2023-08-31
申请号：US18096089
申请日：2023-01-12
CPC分类号： G11C11/1673 , G11C11/1675 , H10B61/00 , H10N50/80
摘要： A magnetic memory device may include a magnetic track, which is extended in a first direction, and a first electrode, which is provided at a biasing point of the magnetic track and is configured to apply a voltage to the magnetic track. The magnetic track includes a first region between a first end of the magnetic track and the biasing point and a second region between the biasing point and a second end of the magnetic track. The first electrode may be configured to cause a difference between a current density in the first region and a current density in the second region.
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8.发明公开公开(公告)号：US20230209838A1
公开(公告)日：2023-06-29
申请号：US18171527
申请日：2023-02-20
发明人： Ung Hwan Pi , Dongkyu Lee
IPC分类号： H10B61/00 , H01L23/528 , H01F10/32 , G11C11/16 , H10N50/80
CPC分类号： H10B61/00 , H01L23/528 , H01F10/329 , G11C11/161 , H01F10/3254 , H10N50/80
摘要： Disclosed is a magnetic memory device including a first magnetic pattern that extends in a first direction and has a magnetization direction fixed in one direction, and a plurality of second magnetic patterns that extend across the first magnetic pattern. The second magnetic patterns extend in a second direction intersecting the first direction and are spaced apart from each other in the first direction. Each of the second magnetic patterns includes a plurality of magnetic domains that are spaced apart from each other in the second direction.
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公开(公告)号：US20210104661A1
公开(公告)日：2021-04-08
申请号：US16901866
申请日：2020-06-15
发明人： Sung Chul Lee , Kwang Seok Kim , Jangeun Lee , Ung Hwan Pi
摘要： A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.
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公开(公告)号：US20210027822A1
公开(公告)日：2021-01-28
申请号：US17039455
申请日：2020-09-30
发明人： Jae Hoon KIM , Hee Ju Shin , Ung Hwan Pi
摘要： A semiconductor device includes a storage layer including at least one first magnetic layer and a reference layer facing the storage layer and including at least one second magnetic layer. The device also includes a tunnel barrier layer between the storage layer and the reference layer. The device further includes at least one spin-orbit torque line adjacent the storage layer.
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