NON-VOLATILE MEMORY DEVICE
    1.
    发明申请

    公开(公告)号:US20190139613A1

    公开(公告)日:2019-05-09

    申请号:US16048786

    申请日:2018-07-30

    CPC classification number: G11C16/26 G11C16/0483 G11C16/30 G11C16/32

    Abstract: A non-volatile memory device includes an output driver to output a data signal. The output driver includes a pull-up driver and a pull-down driver. The pull-up driver includes a first pull-up driver having a plurality of P-type transistors and a second pull-up driver having a plurality of N-type transistors. The pull-down driver includes a plurality of N-type transistors. One or more power supply voltages having different voltage levels are selectively applied to the pull-up driver. A first power supply voltage is applied to the first pull-up driver, and a second power supply voltage is applied to the second pull-up driver.

    NON-VOLATILE MEMORY DEVICE
    2.
    发明申请

    公开(公告)号:US20210391023A1

    公开(公告)日:2021-12-16

    申请号:US17460954

    申请日:2021-08-30

    Abstract: A non-volatile memory device includes a memory cell region including a first metal pad and a memory cell array including a plurality of memory cells, and a peripheral circuit region including a second metal pad and an output driver to output a data signal, and vertically connected to the memory cell region by the first metal pad and the second metal pad. The output driver includes a pull-up driver and a pull-down driver. The pull-up driver includes a first pull-up driver having a plurality of P-type transistors and a second pull-up driver having a plurality of N-type transistors. The pull-down driver includes a plurality of N-type transistors. One or more power supply voltages having different voltage levels are selectively applied to the pull-up driver. A first power supply voltage is applied to the first pull-up driver, and a second power supply voltage is applied to the second pull-up driver.

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