公开(公告)号：US12133393B2

公开(公告)日：2024-10-29

申请号：US17502380

申请日：2021-10-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Do Young Choi ,  Kab Jin Nam ,  In Bong Pok ,  Dae Won Ha ,  Musarrat Hasan

IPC: H01L27/11592 ,  H01L21/02 ,  H01L21/28 ,  H01L27/1159 ,  H01L29/06 ,  H01L29/423 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H10B51/30 ,  H10B51/40

CPC classification number: H10B51/40 ,  H01L21/0259 ,  H01L29/0665 ,  H01L29/40111 ,  H01L29/42392 ,  H01L29/516 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/66795 ,  H01L29/6684 ,  H01L29/78391 ,  H01L29/7851 ,  H01L29/78696 ,  H10B51/30

Abstract: A method of manufacturing a semiconductor device, the method including providing a substrate including a first region and a second region such that the second region is separated from the first region; forming a metal oxide film on the first region of the substrate and the second region of the substrate; forming an upper metal material film on the metal oxide film on the first region of the substrate such that the upper metal material film does not overlap the metal oxide film on the second region of the substrate; and simultaneously annealing the upper metal material film and the metal oxide film to form a ferroelectric insulating film on the first region of the substrate and form a paraelectric insulating film on the second region of the substrate.