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公开(公告)号:US20240241451A1
公开(公告)日:2024-07-18
申请号:US18528998
申请日:2023-12-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Daehee LEE , Sangwon PARK , Kyeonga KIM , Jieun PARK , Byeong-Hwan SON
IPC: G03F7/00 , G03F1/42 , G03F1/44 , H01L21/266
CPC classification number: G03F7/70633 , G03F1/42 , G03F1/44 , G03F7/70683 , H01L21/266
Abstract: A method of measuring overlay, including forming an active region on a cell region of a substrate and forming at least one overlay key structure on a scribe lane region of the substrate, forming a first mask pattern on the active region and forming a first sub-pattern on the overlay key structure, checking an alignment using the first sub-pattern, performing a first ion implantation process into the substrate, forming a second mask pattern on the active region and forming a second sub-pattern on the overlay key structure, checking the alignment using the second sub-pattern, and performing a second ion implantation process into the substrate, wherein a second width of the second sub-pattern is greater than a first width of the first sub-pattern.