Substrate measuring device and a method of using the same

    公开(公告)号:US12007691B2

    公开(公告)日:2024-06-11

    申请号:US17855591

    申请日:2022-06-30

    Abstract: Embodiments of the present disclosure provide a substrate measuring device in a lithography projection apparatus that provides multiple light sources having different wavelengths. In some embodiments, a lithography projection apparatus includes a substrate measuring system disposed proximate to a substrate stage, the substrate measuring system further including an emitter including multiple light sources configured to provide multiple beams of light, each of at least some of the multiple beams of light having a different wavelength, at least one optical fiber, wherein each of respective portions of the at least one optical fiber is configured to pass a respective one of the multiple beams of light, and a receiver positioned to collected light emitted from the emitter and reflected off of a substrate disposed on the substrate stage.

    PHOTOMASK INCLUDING LINE PATTERN MONITORING MARK AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME

    公开(公告)号:US20240085778A1

    公开(公告)日:2024-03-14

    申请号:US18318042

    申请日:2023-05-16

    Inventor: Byungje Jung

    CPC classification number: G03F1/42 G03F1/36 G03F1/44 G03F1/60 G03F1/72 G03F1/80

    Abstract: A photomask includes at least one line pattern monitoring mark having unit blocks that include design line patterns. Each of the unit blocks includes three design line patterns sequentially offset in a second direction perpendicular to the first direction, the unit blocks include a first unit block and a second unit block adjacent to the first unit block, the second unit block is offset from the first unit block by a rounding length in the second direction and is spaced apart from the first unit block in the first direction. In a method of manufacturing an integrated circuit device, monitoring line patterns are formed using the photomask, and a line end profile error in the monitoring line patterns is determined based on a cross-sectional structure of the monitoring line patterns taken along a line extending through at least a portion of the monitoring line patterns in the first direction.

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