公开(公告)号：US10418548B2

公开(公告)日：2019-09-17

申请号：US16018700

申请日：2018-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shinhee Han ,  Kiseok Suh ,  KyungTae Nam ,  Woojin Kim ,  Kwangil Shin ,  Minkyoung Joo ,  Gwanhyeob Koh

IPC: H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16

Abstract: A method of fabricating a magnetic memory device includes forming an interlayered insulating layer on a substrate, forming a landing pad to pass through the interlayered insulating layer, forming a protection insulating layer on the interlayered insulating layer to cover a top surface of the landing pad, forming a bottom electrode to pass through the protection insulating layer and through the interlayered insulating layer, forming a magnetic tunnel junction layer on the protection insulating layer; and patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern on the bottom electrode.

公开(公告)号：US10032981B2

公开(公告)日：2018-07-24

申请号：US15244344

申请日：2016-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shinhee Han ,  Kiseok Suh ,  KyungTae Nam ,  Woojin Kim ,  Kwangil Shin ,  Minkyoung Joo ,  Gwanhyeob Koh

IPC: H01L21/00 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16

Abstract: A method of fabricating a magnetic memory device includes forming an interlayered insulating layer on a substrate, forming a landing pad to pass through the interlayered insulating layer, forming a protection insulating layer on the interlayered insulating layer to cover a top surface of the landing pad, forming a bottom electrode to pass through the protection insulating layer and through the interlayered insulating layer, forming a magnetic tunnel junction layer on the protection insulating layer; and patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern on the bottom electrode.