公开(公告)号：US20170133367A1

公开(公告)日：2017-05-11

申请号：US15416016

申请日：2017-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hoon BAEK ,  Sun-Young PARK ,  Sang-Kyu OH ,  Ha-Young KIM ,  Jung-Ho DO ,  Moo-Gyu BAE ,  Seung-Young LEE

IPC: H01L27/088 ,  H01L21/8234 ,  H01L27/11 ,  H01L23/528 ,  H01L27/02

CPC classification number: H01L27/088 ,  H01L21/823431 ,  H01L21/823475 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/1104

Abstract: Systems on chips are provided. A system on chip (SoC) includes a first gate line, a second gate line and a third gate line extending in a first direction, a gate isolation region cutting the first gate line, the second gate line and the third gate line and extending in a second direction across the first direction, a first gate contact formed on the second gate line arranged between the first gate line and the third gate line, and electrically connecting the cut second gate line, a second gate contact formed on the first gate line, a third gate contact formed on the third gate line, a first metal line electrically connecting the second gate contact and the third gate contact, and a second metal line electrically connected to the first gate contact.

公开(公告)号：US20160056153A1

公开(公告)日：2016-02-25

申请号：US14829650

申请日：2015-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Ho DO ,  SANGHOON BAEK ,  Sunyoung PARK ,  Moo-Gyu BAE ,  TAEJOONG SONG

IPC: H01L27/088 ,  H01L29/06 ,  H01L23/522 ,  H01L27/02 ,  H01L23/535

CPC classification number: H01L27/088 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0924 ,  H01L27/11807 ,  H01L29/0642 ,  H01L2027/11874

Abstract: A semiconductor device includes first and second gate structures extending in a first direction and spaced apart from each other in a second direction intersecting the first direction, a third gate structure extending in the first direction and provided between the first and second gate structures, a first contact connected to the first gate structure and having a first width in the second direction, a second contact connected to the second gate structure and having a second width in the second direction, and a third contact connected to the third gate structure and having a third width in the second direction. The first, second, and third contacts may be aligned with each other in the second direction to constitute one row. The first and second widths may be greater than the third width.

Abstract translation: 半导体器件包括在第一方向上延伸并且沿与第一方向相交的第二方向彼此间隔开的第一和第二栅极结构，在第一方向上延伸并设置在第一和第二栅极结构之间的第三栅极结构， 连接到第一栅极结构并且具有在第二方向上的第一宽度的第二接触，连接到第二栅极结构并且在第二方向上具有第二宽度的第二接触，以及连接到第三栅极结构并具有第三栅极结构的第三接触 宽度在第二个方向。 第一，第二和第三触点可以在第二方向上彼此对准以构成一行。 第一和第二宽度可以大于第三宽度。

公开(公告)号：US20180342505A1

公开(公告)日：2018-11-29

申请号：US16037581

申请日：2018-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hoon BAEK ,  Sun-Young PARK ,  Sang-Kyu OH ,  Ha-young KIM ,  Jung-Ho DO ,  Moo-Gyu BAE ,  Seung-Young LEE

IPC: H01L27/088 ,  H01L23/528 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/11

CPC classification number: H01L27/088 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/845 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/1104 ,  H01L27/1211

Abstract: A method is provided. The method includes forming a first to third gate lines on a substrate, the second gate line formed between the first and third gate lines; forming a gate isolation region to cut the first to third gate lines into two first sub gate lines, two second sub gate lines and two third sub gate lines, respectively; forming a first gate contact on one of the two first sub gate lines; forming a second gate contact on the two second sub gate lines; forming a third gate contact on one of the two third sub gate lines; forming a first metal line to connect the first and third gate contacts; and forming a second metal line. The first to third gate lines extend in a first direction, and the gate isolation region extends in a second direction different from the first direction.

公开(公告)号：US20200152627A1

公开(公告)日：2020-05-14

申请号：US16746071

申请日：2020-01-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hoon BAEK ,  Sun-Young PARK ,  Sang-Kyu OH ,  Ha-young KIM ,  Jung-Ho DO ,  Moo-Gyu BAE ,  Seung-Young LEE

IPC: H01L27/088 ,  H01L27/12 ,  H01L21/84 ,  H01L23/528 ,  H01L21/8234 ,  H01L27/11 ,  H01L27/02

Abstract: A system on chip includes first to third nanowires extending in a second direction, first to third gate lines respectively surrounding the first to third nanowires, each of the first to third gate lines extending in a first direction across the second direction, a gate isolation region cutting the first to third gate lines and extending in the second direction, a first gate contact formed on the second gate line arranged between the first gate line and the third gate line, and electrically connecting the cut second gate line, a second gate contact formed on the first gate line, a third gate contact formed on the third gate line, a first metal line electrically connecting the second gate contact and the third gate contact; and a second metal line electrically connected to the first gate contact.