公开(公告)号：US10032864B2

公开(公告)日：2018-07-24

申请号：US15292515

申请日：2016-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Seok Min ,  Mi Gyeong Gwon ,  Seong Jin Nam ,  Sug Hyun Sung ,  Young Hoon Song ,  Young Mook Oh

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L21/311 ,  H01L29/165 ,  H01J37/32

Abstract: Semiconductor devices are provided. The semiconductor device includes a first fin and a second fin on a substrate and a field insulation layer between the first fin and the second fin. The field insulation layer include a first insulation layer and a second insulation layer on the first insulation layer and connected to the first insulation layer. The second insulation layer is wider than the first insulation layer. A ratio of a top width to a bottom width of each of the first fin and the second fin exceeds 0.5.