公开(公告)号：US20140159081A1

公开(公告)日：2014-06-12

申请号：US14013678

申请日：2013-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong Suk LEE ,  Ok Hyun KIM ,  Dong Yul LEE ,  Dong Ju LEE ,  Jeong Wook LEE ,  Heon Ho LEE

IPC: H01L33/00

CPC classification number: H01L33/007 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/22

Abstract: A method of forming a semiconductor layer is provided. The method includes forming a plurality of nanorods on a substrate and forming a lower semiconductor layer on the substrate so as to expose at least portions of the nanorods. The nanorods are removed so as to form voids in the lower semiconductor layer, and an upper semiconductor layer is formed on an upper portion of the lower semiconductor layer and the voids.

Abstract translation: 提供一种形成半导体层的方法。 该方法包括在衬底上形成多个纳米棒并在衬底上形成下半导体层，以暴露至少部分纳米棒。 去除纳米棒以在下半导体层中形成空隙，并且在半导体层的下部和空隙上形成上半导体层。