公开(公告)号：US20130228747A1

公开(公告)日：2013-09-05

申请号：US13855540

申请日：2013-04-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Heon HAN ,  Joo Young CHEON ,  Je Won KIM ,  Dong Ju LEE ,  Dong Chul SHIN ,  Hyun Wook SHIM ,  Jae Woong HAN

IPC: H01L33/06

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses.

Abstract translation: 提供一种氮化物半导体发光器件，其包括在低电流和高电流密度下具有增强的外部量子效率的有源层。 氮化物半导体发光器件包括第一导电型氮化物半导体层; 设置在所述第一导电型氮化物半导体层上并具有交替布置的多个量子阱层和至少一个量子势垒层的有源层; 以及设置在有源层上的第二导电型氮化物半导体层。 彼此相邻布置的多个量子阱层包括具有不同厚度的第一和第二量子阱层。

公开(公告)号：US20140159081A1

公开(公告)日：2014-06-12

申请号：US14013678

申请日：2013-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong Suk LEE ,  Ok Hyun KIM ,  Dong Yul LEE ,  Dong Ju LEE ,  Jeong Wook LEE ,  Heon Ho LEE

IPC: H01L33/00

CPC classification number: H01L33/007 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/22

Abstract: A method of forming a semiconductor layer is provided. The method includes forming a plurality of nanorods on a substrate and forming a lower semiconductor layer on the substrate so as to expose at least portions of the nanorods. The nanorods are removed so as to form voids in the lower semiconductor layer, and an upper semiconductor layer is formed on an upper portion of the lower semiconductor layer and the voids.

Abstract translation: 提供一种形成半导体层的方法。 该方法包括在衬底上形成多个纳米棒并在衬底上形成下半导体层，以暴露至少部分纳米棒。 去除纳米棒以在下半导体层中形成空隙，并且在半导体层的下部和空隙上形成上半导体层。

公开(公告)号：US20130236634A1

公开(公告)日：2013-09-12

申请号：US13789901

申请日：2013-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Min CHOI ,  Dong Ju LEE ,  Heon Ho LEE ,  Jang Mi KIM ,  Ok Hyun KIM

IPC: C23C16/52

CPC classification number: C23C16/52

Abstract: There is provided a chemical vapor deposition apparatus, including: a reaction chamber including a support part having a wafer placed thereon and a gas supply part supplying a process gas to a reactive space formed above the support part to allow a thin film to be grown on a surface of the wafer; a heat exchanger changing a temperature of the process gas, supplied to the reactive space through the gas supply part, to allow the process gas to be maintained at a set temperature: and a controller regulating a flow rate of the process gas, and detecting a temperature difference between a temperature of the process gas and the set temperature to thereby control the heat exchanger to supply the process gas to the reactive space while the process gas is maintained at a reference temperature set according to each stage.

Abstract translation: 提供了一种化学气相沉积设备，包括：反应室，其包括具有放置在其上的晶片的支撑部分，以及将处理气体供应到形成在支撑部分上方的反应空间的气体供应部分，以使薄膜生长在 晶片的表面; 换热器，其通过气体供给部供给至反应空间的工艺气体的温度，使处理气体保持在设定温度;以及控制器，调节处理气体的流量， 处理气体的温度与设定温度之间的温度差，从而控制热交换器以将处理气体供应到反应空间，同时处理气体保持在根据每个阶段设定的参考温度。

公开(公告)号：US20210005954A1

公开(公告)日：2021-01-07

申请号：US16767711

申请日：2018-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Ju LEE ,  Won Jin CHOI ,  Bong Sup SON ,  Moon Hyuk CHOI ,  Se Woong AHN ,  Su Ho JIN ,  Jung Hyun PARK ,  Sung Jun KIM ,  Sung Chul PARK ,  Ji Woo LEE

IPC: H01Q1/24 ,  H01Q1/38 ,  H04B1/401 ,  H04B7/06

Abstract: Various embodiments of the present invention relate to an electronic device comprising a wireless communication circuit, and a portable communication device. An electronic device, according to one embodiment, comprises: a housing including a side member that forms the sides of the electronic device; a touchscreen display which is at least partially housed in the housing so as to be visually exposed to the outside; a first conductive portion formed from a first portion of the side member; a second conductive portion formed from a second portion of the side member, opposite to the first portion when viewed from the top of the touch screen display exposed to the outside; and at least one wireless communication circuit electrically connected to a first point within the first portion and a second point within the second portion, wherein the at least one wireless communication circuit can be configured to support transmit diversity by generating a first signal having a first phase of a primary configuration carrier and a second signal having a second phase of the primary configuration carrier, transmitting the first signal through the first conductive portion, and transmitting the second signal through the second conductive portion. Other various embodiments are possible.

公开(公告)号：US20140147954A1

公开(公告)日：2014-05-29

申请号：US14167877

申请日：2014-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Ju LEE ,  Heon Ho LEE ,  Hyun Wook SHIM ,  Young Sun KIM

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  H01L33/007 ,  H01L33/32

Abstract: There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.

Abstract translation: 提供了一种制造发光二极管的方法和由其制造的发光二极管。 该方法包括在第一反应室中顺序地在衬底上生长第一导电型氮化物半导体层和未掺杂的氮化物半导体层; 将具有第一导电型氮化物半导体层和其上生长的未掺杂氮化物半导体层的衬底转移到第二反应室; 在第二反应室中的未掺杂的氮化物半导体层上生长附加的第一导电型氮化物半导体层; 在附加的第一导电型氮化物半导体层上生长活性层; 以及在所述有源层上生长第二导电型氮化物半导体层。