公开(公告)号：US20210238478A1

公开(公告)日：2021-08-05

申请号：US17032306

申请日：2020-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Sung LEE ,  Jung Hun LIM ,  Mihyun PARK ,  Changsu JEON ,  Jung-Min OH ,  Subin OH ,  Hyosan LEE

IPC: C09K13/06 ,  H01L21/3213 ,  H01L21/28

Abstract: An etching composition and a method of manufacturing a semiconductor device, the composition including 5 wt % to 30 wt % of an oxidizing agent, based on a total weight of the etching composition; a salt including an anion including a carboxylate moiety having 1 to 5 carbon atoms, and an ammonium cation; and a chelating agent including a phosphonic acid having 1 to 8 carbon atoms.