公开(公告)号：US20200216757A1

公开(公告)日：2020-07-09

申请号：US16734789

申请日：2020-01-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changsu JEON ,  Jungmin OH ,  Hyosan LEE ,  Hoon HAN ,  Jinkyu ROH ,  Hyojoong YOON ,  Dongwun SHIN

IPC: C09K13/00 ,  H01L21/02 ,  H01L21/311

Abstract: A silicon layer etchant composition and associated methods, the composition including about 1 wt % to about 20 wt % of an alkylammonium hydroxide; about 1 wt % to about 30 wt % of an amine compound; about 0.01 wt % to about 0.2 wt % of a nonionic surfactant including both a hydrophobic group and a hydrophilic group; and water, all wt % being based on a total weight of the silicon layer etchant composition.

公开(公告)号：US20210238478A1

公开(公告)日：2021-08-05

申请号：US17032306

申请日：2020-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Sung LEE ,  Jung Hun LIM ,  Mihyun PARK ,  Changsu JEON ,  Jung-Min OH ,  Subin OH ,  Hyosan LEE

IPC: C09K13/06 ,  H01L21/3213 ,  H01L21/28

Abstract: An etching composition and a method of manufacturing a semiconductor device, the composition including 5 wt % to 30 wt % of an oxidizing agent, based on a total weight of the etching composition; a salt including an anion including a carboxylate moiety having 1 to 5 carbon atoms, and an ammonium cation; and a chelating agent including a phosphonic acid having 1 to 8 carbon atoms.