公开(公告)号：US11735694B2

公开(公告)日：2023-08-22

申请号：US16908921

申请日：2020-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Yoon Kim ,  Sungjoon Kim ,  Sanghyun Kim

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/32

CPC classification number: H01L33/382 ,  H01L25/0753 ,  H01L33/32

Abstract: Semiconductor light emitting devices and packages are provided. The semiconductor light emitting device includes a substrate, a luminous structure, and first and second electrodes. The substrate has a first region and a second region that is spaced apart in a first direction from the first region. The luminous structure includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked on the substrate. The first electrode is on the second semiconductor layer. The second electrode is electrically coupled to the first semiconductor layer through plural first openings that penetrate the first electrode, the second semiconductor layer, and the active layer, where the first openings expose the first semiconductor layer. The first electrode is in contact with the second semiconductor layer in the first region and in the second region, and the first openings are in the first region.

公开(公告)号：US11264532B2

公开(公告)日：2022-03-01

申请号：US16727496

申请日：2019-12-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daeyeop Han ,  Kiwon Park ,  Jaeyoon Kim ,  Sungjoon Kim ,  Inho Kim

IPC: H01L33/00 ,  H01L25/075

Abstract: Provided a manufacturing method of a semiconductor light emitting device including forming a plurality of light emitting cells that are separated on a first substrate, forming a first planarization layer by providing an insulating material on the plurality of light emitting cells, forming a second planarization layer by providing a photoresist on the first planarization layer to have a flat upper surface, and soft baking the photoresist, and dry etching the second planarization layer to a predetermined depth to expose a portion of the first planarization layer provided on the plurality of light emitting cells, and a portion of the second planarization layer remaining between the plurality of light emitting cells on the first planarization layer, wherein forming the second planarization layer and dry etching are repeated at least once to remove the portion of the second planarization layer provided between the plurality of light emitting cells.