公开(公告)号：US20240266148A1

公开(公告)日：2024-08-08

申请号：US18416990

申请日：2024-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Su LEE ,  Yeon Tae KIM ,  Yon Joo KANG ,  Yi Hwan KIM ,  Won Ki LEE ,  Hyeon Jin JEON ,  Hyeong Un JEON

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01J37/3244 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/32724 ,  H01J2237/3343

Abstract: A semiconductor manufacturing device comprising a support unit in a chamber. A showerhead disposed between first and second plasma regions. First and second gas supply units injecting first and second process gases, respectively, into the second plasma region through the showerhead. The showerhead includes plasma penetration portions passing a portion of the plasma generated in the first plasma region therethrough. First gas flow paths injecting the first process gas into a first zone of the showerhead. Second gas flow paths injecting the second process gas into a second zone of the showerhead that surrounds the first zone. First and second cavities connected to the first and second gas flow paths, respectively. The first and second cavities diffusing the first and second process gases, respectively. First and second gas spraying holes connected to the first and second cavities, respectively, and facing the second plasma region.