公开(公告)号：US20240355586A1

公开(公告)日：2024-10-24

申请号：US18138730

申请日：2023-04-24

Applicant: Applied Materials, Inc.

Inventor： Linying CUI ,  James ROGERS ,  Rajinder DHINDSA

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32128 ,  H01J37/32568 ,  H01J2237/3343

Abstract: Apparatus and methods for controlling the uniformity of a plasma formed using a radio frequency (RF) source power assembly that includes one or more resonant tuning circuits coupled to two or more electrodes disposed within a multi-electrode source assembly. Improved plasma uniformity control and reduced system cost are achieved by eliminating multiple RF generators and matches that power the multiple electrodes separately. Multiple frequencies may also be provided to multiple electrodes at the same time, which can include another cost savings when using a multi-frequency RF source assembly. Local plasma density and sheath voltage over a surface of a substrate are controlled with segmented electrodes disposed within the processing region of a plasma processing chamber. The ion flux and direction, as well as energetic electron flux towards the substrate, are controlled to address the plasma non-uniformity and global tilt during processing of a semiconductor substrate.

公开(公告)号：US12074076B2

公开(公告)日：2024-08-27

申请号：US17279810

申请日：2020-03-11

Applicant: Hitachi High-Tech Corporation

Inventor： Soichiro Eto

IPC: H01L21/66 ,  G01B11/06 ,  H01J37/22 ,  H01J37/244 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01L22/26 ,  G01B11/06 ,  G01B11/0625 ,  G01B11/0633 ,  G01B11/0666 ,  G01B11/0683 ,  H01J37/22 ,  H01J37/244 ,  H01J37/32082 ,  H01J37/32917 ,  H01J37/32926 ,  H01J37/32963 ,  H01J37/32972 ,  H01L21/3065 ,  H01L21/67253 ,  H01L22/12 ,  H01J2237/2445 ,  H01J2237/24578 ,  H01J2237/3343

Abstract: A plasma processing apparatus and method with an improved processing yield, the plasma processing apparatus including detector configured to detect an intensity of a first light of a plurality of wavelengths in a first wavelength range and an intensity of a second light of a plurality of wavelengths in a second wavelength range, the first light being obtained by receiving a light which is emitted into the processing chamber from a light source disposed outside the processing chamber and which is reflected by an upper surface of the wafer, and the second light being a light transmitted from the light source without passing through the processing chamber; and a determination unit configured to determine a remaining film thickness of the film layer by comparing the intensity of the first light corrected using a change rate of the intensity of the second light.

公开(公告)号：US12014903B2

公开(公告)日：2024-06-18

申请号：US16958313

申请日：2019-07-18

Applicant: Hitachi High-Tech Corporation

Inventor： Tetsuo Kawanabe ,  Motohiro Tanaka ,  Takahiro Sakuragi ,  Kohei Sato

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32082 ,  H01J37/32678 ,  H01J2237/3343

Abstract: In a plasma processing apparatus including a plasma processing chamber disposed in a vacuum chamber, a sample stage disposed in the plasma processing chamber and on which a sample is placed, in the vacuum chamber, a second shower plate disposed above the sample stage, a first shower plate disposed above the second shower plate, and a dielectric window disposed above the first shower plate, first gas is supplied from a first gas supply unit to a space between the dielectric window and the first shower plate, and second gas is supplied from a second gas supply unit to a space between the first shower plate and the second shower plate.

公开(公告)号：US12009235B2

公开(公告)日：2024-06-11

申请号：US17109019

申请日：2020-12-01

Applicant: Applied Materials, Inc.

Inventor： Chuang-Chia Lin ,  Wenwei Qiao

IPC: H01L21/67 ,  C23C16/52 ,  G01F15/06 ,  G01F15/063 ,  G01F15/14 ,  G01L15/00 ,  G01L19/08 ,  G01L19/14 ,  G01N25/18 ,  H01J37/32

CPC classification number: H01L21/67253 ,  C23C16/52 ,  G01F15/063 ,  G01F15/14 ,  G01L15/00 ,  G01L19/086 ,  G01L19/14 ,  G01N25/18 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/32082 ,  H01J2237/2007 ,  H01J2237/3343 ,  H01L21/67069

Abstract: A sensor assembly that includes a substrate and a set of sensors. The set of sensor includes pressure sensor and/or flow sensors located across a surface of the substrate. Each respective sensor of the plurality of sensor is adapted to measure a respective pressure or a respective flow of an environment proximate the respective sensor. Each respective sensor of the plurality of sensor may further be adapted to output a respective signal associated with the measured respective pressure or the measured respective flow. The respective signals associated with the measured respective pressure or the measured respective flows measured by the plurality of sensor together provide a pressure distribution across the surface of the substrate and/or a flow distribution across the surface of the substrate.

公开(公告)号：US20240153747A1

公开(公告)日：2024-05-09

申请号：US18066003

申请日：2022-12-14

Applicant: SEMES CO., LTD.

Inventor： Jae-Won SHIN

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32715 ,  H01J2237/3343

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a process chamber having a treating space therein; a substrate support unit configured to support a substrate in the treating space; a gas supply unit configured to supply a process gas to the treating space; and a plasma source for generating a plasma from the process gas, and wherein the substrate support unit includes: a support plate on which the substrate is placed; a base which is positioned below the support plate; a first ring provided to surround the substrate placed on the support unit; a second ring provided below the first ring and having a through hole; and a ring lift pin assembly for lifting and lowering the first ring and the second ring, and wherein the ring lift pin assembly includes: a first pin provided to be inserted into the through hole and to lift and lower the first ring; a second pin in a hollow shaft shape to lift and lower the second ring and having a hole at which first pin passes through within; and a driving unit for driving the first pin and the second pin, and wherein the through hole overlaps the first ring when seen from above.

公开(公告)号：US11961718B2

公开(公告)日：2024-04-16

申请号：US17186711

申请日：2021-02-26

Applicant: Tokyo Electron Limited

Inventor： Shojiro Yahata ,  Tetsuji Sato

IPC: H01L21/00 ,  H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32091 ,  H01J37/32431 ,  H01J37/32522 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32532 ,  H01J37/32642 ,  H01J2237/2007 ,  H01J2237/3343

Abstract: A plasma processing method of processing a substrate with plasma in a plasma processing apparatus. The plasma processing apparatus includes: a chamber configured to accommodate a substrate; an upper electrode structure forming an upper portion of the chamber and including a temperature-controlled plate, an electrode plate disposed below the temperature-controlled plate, and an electrostatic attractor, the electrostatic attractor including a contact surface, an attraction surface, a first electrode, and a second electrode; a power supply configured to apply a voltage to the first and second electrodes; and a temperature obtaining portion configured to acquire a temperature distribution of the electrode plate. The plasma processing method includes: acquiring, by the temperature obtaining portion, the temperature distribution; applying a first voltage to the first electrode and applying a second voltage to the second electrode according to the acquired temperature distribution; and processing the substrate with plasma.

公开(公告)号：US20230386799A1

公开(公告)日：2023-11-30

申请号：US18447410

申请日：2023-08-10

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Sheng-Chieh HUANG ,  Chang Kuang TSO ,  Chou Feng LEE ,  Chung-Hsiu CHENG ,  Jr-Sheng CHEN ,  Chun Yan CHEN ,  Chih-Hsien HSU ,  Chin-Tai HUNG

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32642 ,  H01L21/3065 ,  H01J2237/3343

Abstract: A focus ring for a plasma-based semiconductor processing tool is designed to provide and/or ensure etch rate uniformity across a wafer during a plasma etch process. The focus ring may include an angled inner wall that is angled away from a center of the focus ring to direct a plasma toward the wafer. The angle of the angled inner wall may be greater than approximately 130 degrees relative to the top surface of the wafer and/or may be less than approximately 50 degrees relative to an adjacent lower surface of the focus ring to reduce and/or eliminate areas of overlapping plasma on the wafer (which would otherwise cause non-uniform etch rates). Moreover, an inner diameter may be configured to be in a range of approximately 209 millimeters to 214 millimeters to further reduce and/or eliminate areas of overlapping plasma on the wafer. In this way, the focus ring provides and/or increases etch rate uniformity across the wafer, which may reduce structural variations across semiconductor devices being formed on the wafer and/or may increase processing yield.

公开(公告)号：US20230326705A1

公开(公告)日：2023-10-12

申请号：US17716010

申请日：2022-04-08

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Chansyun David YANG

IPC: H01J37/147 ,  H01J37/08 ,  H01J37/305 ,  H01J37/02 ,  H01L21/311 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01J37/1471 ,  H01J37/08 ,  H01J37/3056 ,  H01J37/026 ,  H01L21/31116 ,  H01L21/823431 ,  H01L29/66545 ,  H01J2237/1506 ,  H01J2237/3343

Abstract: An ion beam processing tool includes a plasma source, a grid arrangement positioned proximate the plasma source to generate an ion beam, a beam deflector positioned adjacent the grid arrangement, and a controller configured to control the beam deflector to deflect the ion beam to generate a tilted ion beam. A method includes generating an ion beam, directing the ion beam at a target, deflecting the ion beam in a first direction to remove a first portion of material from the target, and deflecting the ion beam in a second direction different than the first direction to remove a second portion of material from the target.

公开(公告)号：US20230307214A1

公开(公告)日：2023-09-28

申请号：US18114295

申请日：2023-02-27

Applicant: Korea Institute of Science and Technology ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ho Joong JUNG ,  Sang Wook HAN ,  Hyung Jun HEO ,  Hansuek LEE ,  Min Kyo SEO ,  Hyeon HWANG

IPC: H01J37/32 ,  G03F7/20 ,  B08B3/08

CPC classification number: H01J37/32825 ,  H01J37/32449 ,  G03F7/2026 ,  B08B3/08 ,  H01J2237/182 ,  H01J2237/3343 ,  H01J2237/3321 ,  H01J37/3266 ,  H01J2237/022

Abstract: The present invention relates to a method for etching lithium niobate, the method including a process of etching lithium niobate using a mask pattern as a physical dry etching method using Ar plasma produced in a chamber through Ar gas, wherein in the process of etching lithium niobate, a process pressure of the chamber is maintained at 1 mTorr to 20 mTorr, and a method for forming a lithium niobate pattern using the same.

公开(公告)号：US20230298866A1

公开(公告)日：2023-09-21

申请号：US18010431

申请日：2021-11-02

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Bing Ji ,  Ken Lucchesi ,  John Holland

IPC: H01J37/32 ,  H01F27/28

CPC classification number: H01J37/32669 ,  H01F27/2823 ,  H01J2237/3343

Abstract: A system for performing a plasma process on a wafer is provided, including: a chamber configured to receive a wafer for plasma processing and having an interior defining a plasma processing region in which a plasma is provided for the plasma processing of the wafer; a first magnetic coil disposed above the chamber and centered about an axis perpendicular to a surface plane of the wafer and through an approximate center of the wafer; a first DC power supply configured to apply a first DC current to the first magnetic coil during the plasma processing, the applied first DC current producing a magnetic field in the plasma processing region that reduces non-uniformity of the plasma.