公开(公告)号：US11101284B2

公开(公告)日：2021-08-24

申请号：US16224367

申请日：2018-12-18

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Jayavel Pachamuthu ,  Hiroyuki Kinoshita ,  Masaaki Higashitani ,  Makoto Dei ,  Junji Oh

IPC: H01L27/11548 ,  H01L27/11575 ,  H01L27/11556 ,  H01L27/11582 ,  H01L23/522 ,  H01L29/10 ,  H01L29/08 ,  H01L21/311 ,  H01L21/02 ,  H01L21/265 ,  H01L21/266 ,  H01L29/49 ,  H01L21/768 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11526 ,  H01L27/11573 ,  H01L21/822

Abstract: A method of forming a semiconductor structure includes providing a dopant species selected from carbon, boron, nitrogen or oxygen into an upper portion of a semiconductor region to form a doped etch stop semiconductor material portion over a remaining semiconductor material portion, forming an overlying material portion over the etch stop semiconductor material portion, etching through the overlying material portion by an etch process that removes the overlying material portion selective to a material of the etch stop semiconductor material portion, and depositing at least one fill material over the etch stop semiconductor material portion.