公开(公告)号：US11495616B2

公开(公告)日：2022-11-08

申请号：US17012862

申请日：2020-09-04

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Takuya Sakurai ,  Yoshitaka Otsu

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L23/522 ,  H01L21/311 ,  H01L21/28 ,  H01L21/768 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11526

Abstract: A semiconductor device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate including a semiconductor material layer, a memory opening and a support opening extending through the alternating stack, a memory opening fill structure located in the memory opening and including a memory film and a semiconductor material portion in contact with the semiconductor material layer, and a support pillar structure located in the support opening. The support pillar structure lacks a semiconductor material portion which is in contact with the semiconductor material layer.