公开(公告)号：US09768180B1

公开(公告)日：2017-09-19

申请号：US15338372

申请日：2016-10-29

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Guangle Zhou ,  Yubao Li ,  Yangyin Chen ,  Tanmay Kumar

IPC: H01L21/00 ,  H01L27/115 ,  H01L21/8234 ,  H01L21/306

CPC classification number: H01L27/11582

Abstract: A method is provided that includes forming a dielectric material above a substrate, forming a hole in the dielectric material, the hole disposed in a first direction, forming a word line layer above the substrate via the hole, the word line layer disposed in a second direction perpendicular to the first direction, the word line layer including a first conductive material having a first work function, forming a nonvolatile memory material on a sidewall of the hole, the nonvolatile memory material including a semiconductor material layer and a conductive oxide material layer, forming a local bit line in the hole, the local bit line including a second conductive material having a second work function, wherein the first work function is greater than the second work function, and forming a memory cell comprising the nonvolatile memory material at an intersection of the local bit line and the word line layer.