公开(公告)号：US20220352384A1

公开(公告)日：2022-11-03

申请号：US17760836

申请日：2020-09-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi OOTA ,  Yoshinori ANDO ,  Shuhei NAGATSUKA ,  Tatsuki KOSHIDA ,  Satoru OHSHITA ,  Ryota HODO ,  Kazuki TSUDA ,  Akio SUZUKI

IPC: H01L29/786 ,  H01L27/108 ,  H01L29/66

Abstract: A semiconductor device that is suitable for high integration is provided. A first layer provided with a first transistor including an oxide semiconductor, over a substrate; a second layer over the first layer; a third layer provided with a second transistor including an oxide semiconductor, over the second layer; a fourth layer between the first layer and the second layer; and a fifth layer between the second layer and the third layer are included. The total internal stress of the first layer and the total internal stress of the third layer act in a first direction, the total internal stress of the second layer acts in the direction opposite to the first direction, and the fourth layer and the fifth layer each include a film having a barrier property.

公开(公告)号：US20220035980A1

公开(公告)日：2022-02-03

申请号：US17299654

申请日：2019-11-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hitoshi KUNITAKE ,  Kazuki TSUDA ,  Tatsuki KOSHIDA ,  Takeya HIROSE ,  Tomoaki ATSUMI

IPC: G06F30/367

Abstract: A transistor model that achieves precise approximation of transistor electrical characteristics is provided. The transistor model is a field-effect transistor model. A first capacitor is provided between a gate and a source. A second capacitor is provided between the gate and a drain. Each of the first capacitor and the second capacitor is a non-linear capacitor whose capacitance value is determined depending on a gate voltage. The first capacitor may be composed of a plurality of variable capacitors. The second capacitor may be composed of a plurality of variable capacitors. When CV characteristics of the first capacitor and CV characteristics of the second capacitor are adjusted, more precise simulation data is obtained.