公开(公告)号：US20190316273A1

公开(公告)日：2019-10-17

申请号：US16471784

申请日：2017-12-11

Applicant: SHOWA DENKO K.K.

Inventor： Naoto ISHIBASHI ,  Keisuke FUKADA ,  Akira BANDOH

IPC: C30B29/36 ,  C30B25/02

Abstract: A method of producing a p-type SiC epitaxial wafer, the method including: a step of setting an input raw material C/Si ratio, being a ratio between the C element and the Si element in a feedstock gas; and a step of obtaining a p-type SiC epitaxial wafer having an Al dopant concentration of at least 1×1018 cm−3 by forming a p-type SiC epitaxial film on a substrate in a film-forming atmosphere comprising the feedstock gas, a Cl-based gas containing Cl in the molecule, and a dopant gas containing Al and C in the molecule, wherein the input raw material C/Si ratio is set based on a total gas C/Si ratio, being a ratio between the C element and the Si element in the film-forming atmosphere containing the C element included in the dopant gas, the input raw material C/Si ratio differs from the total gas C/Si ratio, and the input raw material C/Si ratio is 0.8 or less.