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公开(公告)号：US20200083085A1
公开(公告)日：2020-03-12
申请号：US16559844
申请日：2019-09-04
Applicant: SHOWA DENKO K.K.
Inventor： Jia YU , Naoto ISHIBASHI , Keisuke FUKADA , Yoshikazu UMETA , Hironori ATSUMI
IPC: H01L21/687 , C23C16/458 , H01L21/02
Abstract: A susceptor which is used in a chemical vapor deposition apparatus for growing an epitaxial layer on a principal plane of a wafer by a chemical vapor deposition method, and which includes a base; and three protrusion parts that are disposed on an outer circumferential part of the base and support an outer circumferential part of the wafer, is provided.
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公开(公告)号：US20190161885A1
公开(公告)日：2019-05-30
申请号：US16196246
申请日：2018-11-20
Applicant: SHOWA DENKO K.K.
Inventor： Yasunori MOTOYAMA , Yoshishige OKUNO , Yoshikazu UMETA , Keisuke FUKADA
Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor; and an annular radiation member which is in contact with a back surface of the susceptor opposite to the mounting surface and is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view, in which the radiation member has a higher emissivity than that of the susceptor and has an exposed portion as viewed from the heater.
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公开(公告)号：US20190316273A1
公开(公告)日：2019-10-17
申请号：US16471784
申请日：2017-12-11
Applicant: SHOWA DENKO K.K.
Inventor： Naoto ISHIBASHI , Keisuke FUKADA , Akira BANDOH
Abstract: A method of producing a p-type SiC epitaxial wafer, the method including: a step of setting an input raw material C/Si ratio, being a ratio between the C element and the Si element in a feedstock gas; and a step of obtaining a p-type SiC epitaxial wafer having an Al dopant concentration of at least 1×1018 cm−3 by forming a p-type SiC epitaxial film on a substrate in a film-forming atmosphere comprising the feedstock gas, a Cl-based gas containing Cl in the molecule, and a dopant gas containing Al and C in the molecule, wherein the input raw material C/Si ratio is set based on a total gas C/Si ratio, being a ratio between the C element and the Si element in the film-forming atmosphere containing the C element included in the dopant gas, the input raw material C/Si ratio differs from the total gas C/Si ratio, and the input raw material C/Si ratio is 0.8 or less.
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公开(公告)号：US20190161886A1
公开(公告)日：2019-05-30
申请号：US16196212
申请日：2018-11-20
Applicant: SHOWA DENKO K.K.
Inventor： Yasunori MOTOYAMA , Yoshishige OKUNO , Yoshikazu UMETA , Keisuke FUKADA
Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; and a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor, in which an unevenness is formed on a radiation-receiving surface of the susceptor, which faces a first surface of the heater provided at the susceptor side, and the unevenness is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view.
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公开(公告)号：US20190148496A1
公开(公告)日：2019-05-16
申请号：US16152971
申请日：2018-10-05
Applicant: SHOWA DENKO K.K.
Inventor： Naoto ISHIBASHI , Keisuke FUKADA
Abstract: An SiC epitaxial wafer according to the present invention includes: an SiC single crystal substrate; and a carrier concentration variation layer disposed on one face side of the SiC single crystal substrate, wherein the carrier concentration variation layer includes: high concentration layers in which carrier concentrations thereof are higher than carrier concentrations of adjacent layers; and low concentration layers in which carrier concentrations are lower than in adjacent layers, and the high concentration layers and the low concentration layers are laminated alternately.
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Patent Agency Ranking
公开(公告)号：US20200251561A1
公开(公告)日：2020-08-06
申请号：US16781294
申请日：2020-02-04
Applicant: SHOWA DENKO K.K.
Inventor： Yoshitaka NISHIHARA , Keisuke FUKADA
Abstract: A SiC epitaxial wafer includes a SiC epitaxial layer formed on a SiC single crystal substrate, in which a total density of large-pit defects caused by micropipes in the substrate and large-pit defects caused by substrate carbon inclusions, both of which are contained in the SiC epitaxial layer, is 1 defect/cm2 or less.
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公开(公告)号：US20190144995A1
公开(公告)日：2019-05-16
申请号：US16175936
申请日：2018-10-31
Applicant: SHOWA DENKO K.K.
Inventor： Naoto ISHIBASHI , Keisuke FUKADA , Yoshikazu UMETA , Tomohiro KODAMA
Abstract: A chemical vapor deposition apparatus is provided which comprises a reaction furnace in which vapor deposition is performed and an exhaust pipe which discharges a gas from an interior of the reaction furnace, wherein the exhaust pipe includes at least one of a bending part, and the bending part includes at least one of a pipe-extension part, and the pipe-extension part extends from the bending part and has a storage space in the pipe-extension part.
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公开(公告)号：US20200181798A1
公开(公告)日：2020-06-11
申请号：US16705848
申请日：2019-12-06
Applicant: SHOWA DENKO K.K.
Inventor： Yuichiro MABUCHI , Keisuke FUKADA
IPC: C30B25/12 , C23C16/458 , C23C16/46 , C30B29/36 , C23C16/32 , H01L21/687
Abstract: A susceptor, including: a base portion having a first surface on which a wafer is placed, in which the base portion has a plurality of openings which penetrate through the base portion in a thickness direction and supply an Ar gas to a back surface of the wafer.
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9.发明申请公开(公告)号：US20190169742A1
公开(公告)日：2019-06-06
申请号：US16314084
申请日：2017-06-12
Applicant: SHOWA DENKO K.K.
Inventor： Naoto ISHIBASHI , Keisuke FUKADA , Tomoya UTASHIRO , Akira BANDO
IPC: C23C16/455 , C23C16/32 , C30B29/36 , C30B25/14 , H01L21/02
Abstract: This gas piping system is a run-vent mode gas piping system in which, the gas piping system including a plurality of supply lines through which plural gases are fed individually, an exhaust line that leads from a reactor to an exhaust pump, a run line having one or plural pipes which respectively branch from the plural supply lines, plural vent lines which respectively branch from the supply lines and are connected to the exhaust line, and plural valves which are respectively provided at the branch points of the plural supply lines, and switches between feeding a gas to the run line side and feeding a gas to the vent line side, wherein the plural vent lines are separated from each other until the vent lines reach the exhaust line, and the inner diameter of the exhaust line is greater than the inner diameter of the plural vent lines.
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公开(公告)号：US20170345658A1
公开(公告)日：2017-11-30
申请号：US15534317
申请日：2015-12-08
Inventor： Keisuke FUKADA , Masahiko ITO , Isaho KAMATA , Hidekazu TSUCHIDA , Hideyuki UEHIGASHI , Hiroaki FUJIBAYASHI , Masami NAITO , Kazukuni HARA , Takahiro KOZAWA , Hirofumi AOKI
IPC: H01L21/205 , C30B25/20 , C30B25/18 , C30B25/14 , C23C16/455 , C30B29/36 , C23C16/42
CPC classification number: H01L21/205 , C23C16/325 , C23C16/42 , C23C16/455 , C23C16/4557 , C23C16/45574 , C30B25/14 , C30B25/186 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/02529 , H01L21/0262
Abstract: A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.
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