公开(公告)号：US20200083085A1

公开(公告)日：2020-03-12

申请号：US16559844

申请日：2019-09-04

Applicant: SHOWA DENKO K.K.

Inventor： Jia YU ,  Naoto ISHIBASHI ,  Keisuke FUKADA ,  Yoshikazu UMETA ,  Hironori ATSUMI

IPC: H01L21/687 ,  C23C16/458 ,  H01L21/02

Abstract: A susceptor which is used in a chemical vapor deposition apparatus for growing an epitaxial layer on a principal plane of a wafer by a chemical vapor deposition method, and which includes a base; and three protrusion parts that are disposed on an outer circumferential part of the base and support an outer circumferential part of the wafer, is provided.

公开(公告)号：US20190316273A1

公开(公告)日：2019-10-17

申请号：US16471784

申请日：2017-12-11

Applicant: SHOWA DENKO K.K.

Inventor： Naoto ISHIBASHI ,  Keisuke FUKADA ,  Akira BANDOH

IPC: C30B29/36 ,  C30B25/02

Abstract: A method of producing a p-type SiC epitaxial wafer, the method including: a step of setting an input raw material C/Si ratio, being a ratio between the C element and the Si element in a feedstock gas; and a step of obtaining a p-type SiC epitaxial wafer having an Al dopant concentration of at least 1×1018 cm−3 by forming a p-type SiC epitaxial film on a substrate in a film-forming atmosphere comprising the feedstock gas, a Cl-based gas containing Cl in the molecule, and a dopant gas containing Al and C in the molecule, wherein the input raw material C/Si ratio is set based on a total gas C/Si ratio, being a ratio between the C element and the Si element in the film-forming atmosphere containing the C element included in the dopant gas, the input raw material C/Si ratio differs from the total gas C/Si ratio, and the input raw material C/Si ratio is 0.8 or less.

公开(公告)号：US20190148496A1

公开(公告)日：2019-05-16

申请号：US16152971

申请日：2018-10-05

Applicant: SHOWA DENKO K.K.

Inventor： Naoto ISHIBASHI ,  Keisuke FUKADA

IPC: H01L29/16 ,  H01L29/06 ,  H01L21/02 ,  H01L29/04

Abstract: An SiC epitaxial wafer according to the present invention includes: an SiC single crystal substrate; and a carrier concentration variation layer disposed on one face side of the SiC single crystal substrate, wherein the carrier concentration variation layer includes: high concentration layers in which carrier concentrations thereof are higher than carrier concentrations of adjacent layers; and low concentration layers in which carrier concentrations are lower than in adjacent layers, and the high concentration layers and the low concentration layers are laminated alternately.

公开(公告)号：US20190169742A1

公开(公告)日：2019-06-06

申请号：US16314084

申请日：2017-06-12

Applicant: SHOWA DENKO K.K.

Inventor： Naoto ISHIBASHI ,  Keisuke FUKADA ,  Tomoya UTASHIRO ,  Akira BANDO

IPC: C23C16/455 ,  C23C16/32 ,  C30B29/36 ,  C30B25/14 ,  H01L21/02

Abstract: This gas piping system is a run-vent mode gas piping system in which, the gas piping system including a plurality of supply lines through which plural gases are fed individually, an exhaust line that leads from a reactor to an exhaust pump, a run line having one or plural pipes which respectively branch from the plural supply lines, plural vent lines which respectively branch from the supply lines and are connected to the exhaust line, and plural valves which are respectively provided at the branch points of the plural supply lines, and switches between feeding a gas to the run line side and feeding a gas to the vent line side, wherein the plural vent lines are separated from each other until the vent lines reach the exhaust line, and the inner diameter of the exhaust line is greater than the inner diameter of the plural vent lines.

公开(公告)号：US20190144995A1

公开(公告)日：2019-05-16

申请号：US16175936

申请日：2018-10-31

Applicant: SHOWA DENKO K.K.

Inventor： Naoto ISHIBASHI ,  Keisuke FUKADA ,  Yoshikazu UMETA ,  Tomohiro KODAMA

IPC: C23C16/44 ,  C23C16/32 ,  C30B25/14

Abstract: A chemical vapor deposition apparatus is provided which comprises a reaction furnace in which vapor deposition is performed and an exhaust pipe which discharges a gas from an interior of the reaction furnace, wherein the exhaust pipe includes at least one of a bending part, and the bending part includes at least one of a pipe-extension part, and the pipe-extension part extends from the bending part and has a storage space in the pipe-extension part.

公开(公告)号：US20220173001A1

公开(公告)日：2022-06-02

申请号：US17456506

申请日：2021-11-24

Applicant: Showa Denko K.K.

Inventor： Naoto ISHIBASHI ,  Koichi MURATA ,  Hidekazu TSUCHIDA

IPC: H01L21/66 ,  H01L21/02

Abstract: A SiC epitaxial wafer according to an embodiment includes: a SiC substrate; and a SiC epitaxial layer formed on a first surface of the SiC substrate. The in-plane uniformity of a density of Z1/2 centers of the SiC epitaxial layer is 5% or less.

公开(公告)号：US20210066113A1

公开(公告)日：2021-03-04

申请号：US16644250

申请日：2018-06-22

Applicant: SHOWA DENKO K.K.

Inventor： Yoshikazu UMETA ,  Keisuke FUKADA ,  Naoto ISHIBASHI ,  Hironori ATSUMI

IPC: H01L21/687 ,  H01L21/02 ,  C23C16/458 ,  C23C16/32

Abstract: A susceptor (1) of the present invention is a susceptor that is configured to hold a wafer in a CVD apparatus that forms a layer on a wafer through chemical vapor deposition, and includes an external susceptor (2) and an internal susceptor (1). The external susceptor (2) has an opening (2c) that accommodates the internal susceptor (1) in a coupling manner and has a wafer placement surface (2a) on which an outer peripheral portion (Ws) of a wafer is placed. The internal susceptor (1) includes a projection portion (1a) on a surface (1b) facing the wafer (W), and a height (h) of the projection portion (1a) is a height at which the projection portion does not come into contact with the wafer (W) when the wafer (W) is placed on the susceptor.

公开(公告)号：US20200083330A1

公开(公告)日：2020-03-12

申请号：US16616780

申请日：2018-04-19

Applicant: SHOWA DENKO K.K. ,  Central Research Institute of Electric Power Industry ,  DENSO CORPORATION

Inventor： Keisuke FUKADA ,  Naoto ISHIBASHI ,  Akira BANDO ,  Masahiko ITO ,  Isaho KAMATA ,  Hidekazu TSUCHIDA ,  Kazukuni HARA ,  Masami NAITO ,  Hideyuki UEHIGASHI ,  Hiroaki FUJIBAYASHI ,  Hirofumi AOKI ,  Toshikazu SUGIURA ,  Katsumi SUZUKI

IPC: H01L29/16 ,  C23C16/42 ,  C30B29/36 ,  H01L21/02

Abstract: A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 μm/h or more from an initial growth stage.

公开(公告)号：US20180371640A1

公开(公告)日：2018-12-27

申请号：US16063391

申请日：2016-12-12

Applicant: SHOWA DENKO K.K.

Inventor： Jia YU ,  Naoto ISHIBASHI ,  Keisuke FUKADA ,  Tomoya UTASHIRO ,  Hironori ATSUMI

IPC: C30B25/12 ,  C23C16/458 ,  H01L21/687 ,  C30B25/10 ,  C30B25/14

Abstract: A wafer supporting mechanism including: a wafer supporting table; and a movable part supported by the wafer supporting table, wherein the wafer supporting table includes a wafer supporting portion for transfer that stands up from a first surface opposing a back surface of a wafer to be placed and is provided further toward an inner side than an outer peripheral edge of the wafer to be placed, and the movable part includes a wafer supporting portion for film formation that is positioned further toward an outer peripheral side of the wafer to be placed than the wafer supporting portion for transfer and is relatively movable with respect to the wafer supporting table in a standing direction of the wafer supporting portion for transfer.