公开(公告)号：US20220172772A1

公开(公告)日：2022-06-02

申请号：US17676644

申请日：2022-02-21

Applicant: SK hynix Inc.

Inventor： Se Won LEE ,  Tae Kyun SHIN ,  Jun Sang LEE

IPC: G11C11/406 ,  G11C11/4074

Abstract: An electronic device includes an internal mode control circuit suitable for generating a burst control signal, a blocking control signal and an internal voltage control signal based on a refresh cycle when an internal mode is performed in a self-refresh operation, a refresh control circuit suitable for generating a refresh signal for performing a refresh operation every refresh cycle when the self-refresh operation is performed, generating the refresh signal every set cycle based on the burst control signal when the internal mode is performed, and blocking the generation of the refresh signal based on the blocking control signal, and an internal voltage generation circuit suitable for adjusting a level of an internal voltage for the refresh operation based on the internal voltage control signal.

公开(公告)号：US20190391757A1

公开(公告)日：2019-12-26

申请号：US16256042

申请日：2019-01-24

Applicant: SK hynix Inc.

Inventor： Jin Yong SEONG ,  Jun Sang LEE

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/32

Abstract: In a storage device having an improved data receiving rate, the storage device includes: a plurality of memory devices each including a plurality of select signal pads; and a memory controller for providing a plurality of select signals representing a selected memory device among the plurality of memory devices through the plurality of select signal pads, wherein some select signals among the plurality of select signals include stack information indicating a number of the plurality of memory devices controlled by the memory controller.