SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

    公开(公告)号:US20220336499A1

    公开(公告)日:2022-10-20

    申请号:US17719052

    申请日:2022-04-12

    Applicant: Socionext Inc.

    Abstract: In a power line structure for supplying power to standard cells, buried power lines extending in the X direction are placed at a given spacing in the Y direction. A local power line extending in the Y direction is connected with the buried power lines. Metal power lines extending in the X direction are formed in an upper-layer metal interconnect layer and connected with the local power line. The spacing of placement of the metal power lines in the Y direction is greater than the spacing of placement of the buried power lines.

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