SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

    公开(公告)号:US20220246644A1

    公开(公告)日:2022-08-04

    申请号:US17720802

    申请日:2022-04-14

    Applicant: Socionext Inc.

    Inventor: Yasuhiro NAKAOKA

    Abstract: A terminal cell includes: third and fourth nanosheets formed at the same positions as first and second nanosheets, respectively, in the Y direction; and first and second dummy gate interconnects surrounding the peripheries of the third and fourth nanosheets, respectively, in the Y direction. Faces of the first and third nanosheets on one side in the Y direction are exposed from a first gate interconnect and the first dummy gate interconnect, respectively. Faces of the second and fourth nanosheets on one side in the Y direction are exposed from a second gate interconnect and the second dummy gate interconnect, respectively.

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