公开(公告)号：US20150357513A1

公开(公告)日：2015-12-10

申请号：US14827709

申请日：2015-08-17

Applicant: SORAA, INC.

Inventor： MICHAEL J. CICH ,  KENNETH JOHN THOMSON

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/38

CPC classification number: H01L33/0075 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/405 ,  H01L2933/0008 ,  H01L2933/0016 ,  H01L2933/0033

Abstract: A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.

公开(公告)号：US20150014695A1

公开(公告)日：2015-01-15

申请号：US13937338

申请日：2013-07-09

Applicant: SORAA, INC.

Inventor： MICHAEL J. CICH ,  KENNETH JOHN THOMSON

IPC: H01L33/32 ,  H01L33/22

CPC classification number: H01L33/0075 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/405 ,  H01L2933/0008 ,  H01L2933/0016 ,  H01L2933/0033

Abstract: A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.