公开(公告)号：US09306505B2

公开(公告)日：2016-04-05

申请号：US14343894

申请日：2012-10-08

Applicant: ST-Ericsson SA

Inventor： Frederic Rivoirard

IPC: H03F3/04 ,  H03F1/32 ,  H03F1/26 ,  H03F1/56 ,  H03F3/195 ,  H03F3/45 ,  H03F3/193 ,  H03F3/21

CPC classification number: H03F1/3205 ,  H03F1/26 ,  H03F1/3211 ,  H03F1/56 ,  H03F3/193 ,  H03F3/195 ,  H03F3/211 ,  H03F3/45179 ,  H03F3/45273 ,  H03F2200/06 ,  H03F2200/09 ,  H03F2200/294 ,  H03F2200/451 ,  H03F2203/45091 ,  H03F2203/45306 ,  H03F2203/45311 ,  H03F2203/45312 ,  H03F2203/45334 ,  H03F2203/45512 ,  H03F2203/45544 ,  H03F2203/45562 ,  H03F2203/45576

Abstract: A low-noise amplifier (LNA) circuit utilizes the capacitive cross coupling technique with two pairs of NMOS transistors in conjunction with two cross coupled PMOS transistors to obtain a reduced noise figure. By using the cross coupling technique on the PMOS input transistor, the LNA circuit is able to reduce the noise figure below 2 dB without the use of an inductor. This LNA circuit may be used to amplify a signal in the WLAN band or the Bluetooth band, either independently or simultaneously.

Abstract translation: 低噪声放大器（LNA）电路利用电容交叉耦合技术与两对NMOS晶体管结合两个交叉耦合的PMOS晶体管来获得降低的噪声系数。 通过在PMOS输入晶体管上使用交叉耦合技术，LNA电路能够将低于2 dB的噪声系数降低，而无需使用电感器。 该LNA电路可以用于单独地或同时地放大WLAN频带或蓝牙频带中的信号。

公开(公告)号：US20140375386A1

公开(公告)日：2014-12-25

申请号：US14343894

申请日：2012-10-08

Applicant: ST-Ericsson SA

Inventor： Frederic Rivoirard

IPC: H03F1/32 ,  H03F3/21 ,  H03F3/45 ,  H03F3/193

CPC classification number: H03F1/3205 ,  H03F1/26 ,  H03F1/3211 ,  H03F1/56 ,  H03F3/193 ,  H03F3/195 ,  H03F3/211 ,  H03F3/45179 ,  H03F3/45273 ,  H03F2200/06 ,  H03F2200/09 ,  H03F2200/294 ,  H03F2200/451 ,  H03F2203/45091 ,  H03F2203/45306 ,  H03F2203/45311 ,  H03F2203/45312 ,  H03F2203/45334 ,  H03F2203/45512 ,  H03F2203/45544 ,  H03F2203/45562 ,  H03F2203/45576

Abstract: The low-noise amplifier circuit exhibits reduced noise.

Abstract translation: 低噪声放大器电路表现出降低的噪声。