公开(公告)号：US20150200099A1

公开(公告)日：2015-07-16

申请号：US14669183

申请日：2015-03-26

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： PIERRE CAUBET ,  SYLVAIN BAUDOT

IPC: H01L21/28 ,  H01L21/285

CPC classification number: H01L21/28088 ,  H01L21/28158 ,  H01L21/28556 ,  H01L29/4966

Abstract: A MOS transistor having a gate insulator including a dielectric of high permittivity and a conductive layer including a TiN layer, wherein the nitrogen composition in the TiN layer is sub-stoichiometric in its lower portion and progressively increases to a stoichiometric composition in its upper portion.

Abstract translation: 一种MOS晶体管，其具有包含高介电常数的电介质的栅极绝缘体和包含TiN层的导电层，其中TiN层中的氮组成在其下部为亚化学计量比，并且在其上部逐渐增加至化学计量组成。

公开(公告)号：US20160372183A1

公开(公告)日：2016-12-22

申请号：US15249583

申请日：2016-08-29

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： PIERRE CAUBET ,  MICKAEL GROS-JEAN

IPC: G11C11/42 ,  G02F1/15 ,  G11C13/04

CPC classification number: G11C11/42 ,  G02F1/15 ,  G02F1/1523 ,  G02F1/1525 ,  G02F1/1527 ,  G02F1/163 ,  G02F3/022 ,  G02F2001/1512 ,  G02F2001/1635 ,  G02F2201/58 ,  G11C7/00 ,  G11C13/04

Abstract: A memory device may include an access transistor, and a memory cell configured to store an item of information. The memory cell may include first and second electrodes configured to have different optoelectronic states corresponding respectively to two values of the item of information, and to switch between the different optoelectronic states based upon a control signal external to the memory cell, the different optoelectronic states being naturally stable in an absence of the control signal. The memory cell may also include a solid electrolyte between the first and second electrodes.