公开(公告)号：US20150200099A1

公开(公告)日：2015-07-16

申请号：US14669183

申请日：2015-03-26

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： PIERRE CAUBET ,  SYLVAIN BAUDOT

IPC: H01L21/28 ,  H01L21/285

CPC classification number: H01L21/28088 ,  H01L21/28158 ,  H01L21/28556 ,  H01L29/4966

Abstract: A MOS transistor having a gate insulator including a dielectric of high permittivity and a conductive layer including a TiN layer, wherein the nitrogen composition in the TiN layer is sub-stoichiometric in its lower portion and progressively increases to a stoichiometric composition in its upper portion.

Abstract translation: 一种MOS晶体管，其具有包含高介电常数的电介质的栅极绝缘体和包含TiN层的导电层，其中TiN层中的氮组成在其下部为亚化学计量比，并且在其上部逐渐增加至化学计量组成。