公开(公告)号：US12125899B2

公开(公告)日：2024-10-22

申请号：US17180197

申请日：2021-02-19

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： Arnaud Regnier ,  Dann Morillon ,  Franck Julien ,  Marjorie Hesse

IPC: H01L29/66 ,  H01L21/28 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L29/66568 ,  H01L21/28114 ,  H01L21/28132 ,  H01L21/823468 ,  H01L21/84 ,  H01L27/1207 ,  H01L29/41775 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/6656 ,  H01L29/66659 ,  H01L29/66772 ,  H01L29/7833 ,  H01L29/78654

Abstract: A method of manufacturing a MOS transistor includes forming a conductive first gate and forming insulating spacers along opposite sides of the gate, wherein the spacers are formed before the gate.

公开(公告)号：US10930757B2

公开(公告)日：2021-02-23

申请号：US16228032

申请日：2018-12-20

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： Arnaud Regnier ,  Dann Morillon ,  Franck Julien ,  Marjorie Hesse

IPC: H01L29/66 ,  H01L21/28 ,  H01L29/423 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/8234 ,  H01L29/417 ,  H01L29/78

Abstract: A method of manufacturing a MOS transistor includes forming a conductive first gate and forming insulating spacers along opposite sides of the gate, wherein the spacers are formed before the gate.