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公开(公告)号：US11495310B2
公开(公告)日：2022-11-08
申请号：US17508775
申请日：2021-10-22
Applicant: STMicroelectronics S.r.l.
Inventor： Giovanni Matranga , Gianbattista Lo Giudice , Rosario Roberto Grasso , Alberto Jose' Di Martino
Abstract: A method for erasing non-volatile memory including applying a first voltage pulse to a non-volatile memory cell to perform a first erase operation of the non-volatile memory cell and determining that a threshold voltage of the non-volatile memory cell is greater than a test voltage. The method further comprising updating a dedicated memory location with a value; and checking the non-volatile memory cell to determine whether the threshold voltage of the non-volatile memory cell is less than an erase-verify voltage to verify that the first erase operation has been performed successfully.
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2.发明申请公开(公告)号：US20180151231A1
公开(公告)日：2018-05-31
申请号：US15607636
申请日：2017-05-29
Inventor： Francesca Grande , Francesco La Rosa , Gianbattista Lo Giudice , Giovanni Matranga
CPC classification number: G11C16/16 , G11C16/26 , G11C16/3445
Abstract: A method can be used for reducing a memory operation time in a non-volatile memory device having a memory array with a number of memory cells. The method includes performing a first execution of the memory operation on a set of memory cells by applying a first biasing configuration, storing information associated to the first biasing configuration, and performing a second execution, subsequent to the first execution, of the memory operation on the same set of memory cells by applying a second biasing configuration that is determined according to the stored information associated to the first biasing configuration.
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公开(公告)号：US11328778B2
公开(公告)日：2022-05-10
申请号：US16925104
申请日：2020-07-09
Applicant: STMicroelectronics S.r.l.
Inventor： Gianbattista Lo Giudice , Giovanni Matranga , Rosario Roberto Grasso , Alberto Jose' Di Martino
Abstract: A method of operating a non-volatile memory including having a first set of non-volatile memory cells and a second set of non-volatile memory cells. The first set of non-volatile memory cells and second set of non-volatile memory cells are associated with host addresses. Voltage levels are determined to erase the first and second sets of non-volatile memory cells. The first and second sets of non-volatile memory cells are disassociated from the host addresses. And, the first set of non-volatile memory cells is associated to another address based on the voltage level effective to erase the non-volatile memory cells.
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Patent Agency Ranking
公开(公告)号：US20220011943A1
公开(公告)日：2022-01-13
申请号：US16925104
申请日：2020-07-09
Applicant: STMicroelectronics S.r.l.
Inventor： Gianbattista Lo Giudice , Giovanni Matranga , Rosario Roberto Grasso , Alberto Jose' Di Martino
Abstract: A method of operating a non-volatile memory including having a first set of non-volatile memory cells and a second set of non-volatile memory cells. The first set of non-volatile memory cells and second set of non-volatile memory cells are associated with host addresses. Voltage levels are determined to erase the first and second sets of non-volatile memory cells. The first and second sets of non-volatile memory cells are disassociated from the host addresses. And, the first set of non-volatile memory cells is associated to another address based on the voltage level effective to erase the non-volatile memory cells.
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5.发明申请MANAGING OF THE ERASING OF OPERATIVE PAGES OF A FLASH MEMORY DEVICE THROUGH SERVICE PAGES 有权通过服务页面管理闪存存储设备的操作页面公开(公告)号：US20130272068A1
公开(公告)日：2013-10-17
申请号：US13860056
申请日：2013-04-10
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giovanni Matranga , Mario Micciche , Rosario Roberto Grasso
IPC: G11C16/16
Abstract: A method for managing a flash memory device including pages of memory cells is described. The memory device may be erasable at the page level, and the pages may include operative pages for storing operative values and service pages for storing information relating to the erasing of the operative pages. In response to a request to erase selected operative pages, the method may include determining a service page in use among the service pages according to service information stored in the service pages, verifying the presence a service page to be erased, and applying an erasing pulse to each service page to be erased. The method may also include writing an address of the operative pages into the service page in use, erasing the selected operative pages, and writing a completion indication of the erasing of the selected operative pages into the service page in use.
Abstract translation: 描述了一种用于管理包括存储器单元的页面的闪存设备的方法。 存储器件可以在页面级别可擦除，并且页面可以包括用于存储操作值的操作页面和用于存储与操作页面的擦除有关的信息的服务页面。 响应于删除所选择的操作页面的请求，该方法可以包括根据服务页面中存储的服务信息来确定服务页面中使用的服务页面，验证是否存在要擦除的服务页面，以及应用擦除脉冲 到每个服务页面被擦除。 该方法还可以包括在使用中将操作页面的地址写入服务页面，擦除所选择的操作页面，以及将所选择的操作页面的擦除的完成指示写入正在使用的服务页面中。
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公开(公告)号：US11183255B1
公开(公告)日：2021-11-23
申请号：US16925059
申请日：2020-07-09
Applicant: STMicroelectronics S.r.l.
Inventor： Giovanni Matranga , Gianbattista Lo Giudice , Rosario Roberto Grasso , Alberto Jose′ Di Martino
Abstract: A method for erasing non-volatile memory including applying a first voltage pulse to a non-volatile memory cell to perform a first erase operation of the non-volatile memory cell and determining that a threshold voltage of the non-volatile memory cell is greater than a test voltage. The method further comprising updating a dedicated memory location with a value; and checking the non-volatile memory cell to determine whether the threshold voltage of the non-volatile memory cell is less than an erase-verify voltage to verify that the first erase operation has been performed successfully.
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公开(公告)号：US10147490B2
公开(公告)日：2018-12-04
申请号：US15607636
申请日：2017-05-29
Inventor： Francesca Grande , Francesco La Rosa , Gianbattista Lo Giudice , Giovanni Matranga
Abstract: A method can be used for reducing a memory operation time in a non-volatile memory device having a memory array with a number of memory cells. The method includes performing a first execution of the memory operation on a set of memory cells by applying a first biasing configuration, storing information associated to the first biasing configuration, and performing a second execution, subsequent to the first execution, of the memory operation on the same set of memory cells by applying a second biasing configuration that is determined according to the stored information associated to the first biasing configuration.
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8.发明授权Managing of the erasing of operative pages of a flash memory device through service pages 有权通过服务页面管理闪存设备的操作页面的擦除公开(公告)号：US09240243B2
公开(公告)日：2016-01-19
申请号：US13860056
申请日：2013-04-10
Applicant: STMicroelectronics S.r.l.
Inventor： Giovanni Matranga , Mario Micciche , Rosario Roberto Grasso
Abstract: A method for managing a flash memory device including pages of memory cells is described. The memory device may be erasable at the page level, and the pages may include operative pages for storing operative values and service pages for storing information relating to the erasing of the operative pages. In response to a request to erase selected operative pages, the method may include determining a service page in use among the service pages according to service information stored in the service pages, verifying the presence a service page to be erased, and applying an erasing pulse to each service page to be erased. The method may also include writing an address of the operative pages into the service page in use, erasing the selected operative pages, and writing a completion indication of the erasing of the selected operative pages into the service page in use.
Abstract translation: 描述了一种用于管理包括存储器单元的页面的闪存设备的方法。 存储器件可以在页面级别可擦除，并且页面可以包括用于存储操作值的操作页面和用于存储与操作页面的擦除有关的信息的服务页面。 响应于删除所选择的操作页面的请求，该方法可以包括根据服务页面中存储的服务信息来确定服务页面中使用的服务页面，验证是否存在要擦除的服务页面，以及应用擦除脉冲 到每个服务页面被擦除。 该方法还可以包括在使用中将操作页面的地址写入服务页面，擦除所选择的操作页面，以及将所选择的操作页面的擦除的完成指示写入正在使用的服务页面中。
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