公开(公告)号：US09711599B2

公开(公告)日：2017-07-18

申请号：US14735679

申请日：2015-06-10

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Simone Rascuna ,  Fabrizio Roccaforte

IPC: H01L29/66 ,  H01L29/45 ,  H01L29/16 ,  H01L29/872 ,  H01L29/417 ,  H01L21/04 ,  H01L29/47 ,  H01L29/06 ,  H01L29/861

CPC classification number: H01L29/1608 ,  H01L21/046 ,  H01L21/0485 ,  H01L21/0495 ,  H01L29/0696 ,  H01L29/417 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66143 ,  H01L29/8611 ,  H01L29/872

Abstract: A switching device, such as a barrier junction Schottky diode, has a body of silicon carbide of a first conductivity type housing switching regions of a second conductivity type. The switching regions extend from a top surface of the body and delimit body surface portions between them. A contact metal layer having homogeneous chemical-physical characteristics extends on and in direct contact with the top surface of the body and forms Schottky contact metal portions with the surface portions of the body and ohmic contact metal portions with the switching regions. The contact metal layer is formed by depositing a nickel or cobalt layer on the body and carrying out a thermal treatment so that the metal reacts with the semiconductor material of the body and forms a silicide.

公开(公告)号：US20150372093A1

公开(公告)日：2015-12-24

申请号：US14735679

申请日：2015-06-10

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Simone Rascuna ,  Fabrizio Roccaforte

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/06 ,  H01L29/417 ,  H01L21/04 ,  H01L29/47 ,  H01L29/872 ,  H01L29/45

CPC classification number: H01L29/1608 ,  H01L21/046 ,  H01L21/0485 ,  H01L21/0495 ,  H01L29/0696 ,  H01L29/417 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66143 ,  H01L29/8611 ,  H01L29/872

Abstract: A switching device, such as a barrier junction Schottky diode, has a body of silicon carbide of a first conductivity type housing switching regions of a second conductivity type. The switching regions extend from a top surface of the body and delimit body surface portions between them. A contact metal layer having homogeneous chemical-physical characteristics extends on and in direct contact with the top surface of the body and forms Schottky contact metal portions with the surface portions of the body and ohmic contact metal portions with the switching regions. The contact metal layer is formed by depositing a nickel or cobalt layer on the body and carrying out a thermal treatment so that the metal reacts with the semiconductor material of the body and forms a silicide.

Abstract translation: 诸如势垒接合肖特基二极管的开关器件具有第一导电类型的碳化硅壳体，其具有第二导电类型的开关区域。 切换区域从主体的顶表面延伸并限定它们之间的主体表面部分。 具有均匀的化学 - 物理特性的接触金属层在主体的顶表面上延伸并直接接触，并与主体的表面部分和欧姆接触金属部分形成肖特基接触金属部分与开关区域。 接触金属层通过在体上沉积镍或钴层并进行热处理以使金属与体的半导体材料反应并形成硅化物而形成。

公开(公告)号：US11715769B2

公开(公告)日：2023-08-01

申请号：US17375426

申请日：2021-07-14

Applicant: STMicroelectronics S.r.l.

Inventor： Simone Rascuna ,  Claudio Chibbaro

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/872

CPC classification number: H01L29/1608 ,  H01L29/66143 ,  H01L29/872

Abstract: An electronic device includes a solid body of SiC having a surface and having a first conductivity type. A first implanted region and a second implanted region have a second conductivity type and extend into the solid body in a direction starting from the surface and delimit between them a surface portion of the solid body. A Schottky contact is on the surface and in direct contact with the surface portion. Ohmic contacts are on the surface and in direct contact with the first and second implanted regions. The solid body includes an epitaxial layer including the surface portion and a bulk portion. The surface portion houses a plurality of doped sub-regions which extend in succession one after another in the direction, are of the first conductivity type, and have a respective conductivity level higher than that of the bulk portion.

公开(公告)号：US12094933B2

公开(公告)日：2024-09-17

申请号：US18334275

申请日：2023-06-13

Applicant: STMicroelectronics S.r.l.

Inventor： Simone Rascuna ,  Claudio Chibbaro

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/872

CPC classification number: H01L29/1608 ,  H01L29/66143 ,  H01L29/872

Abstract: An electronic device includes a solid body of SiC having a surface and having a first conductivity type. A first implanted region and a second implanted region have a second conductivity type and extend into the solid body in a direction starting from the surface and delimit between them a surface portion of the solid body. A Schottky contact is on the surface and in direct contact with the surface portion. Ohmic contacts are on the surface and in direct contact with the first and second implanted regions. The solid body includes an epitaxial layer including the surface portion and a bulk portion. The surface portion houses a plurality of doped sub-regions which extend in succession one after another in the direction, are of the first conductivity type, and have a respective conductivity level higher than that of the bulk portion.