公开(公告)号：US20240030300A1

公开(公告)日：2024-01-25

申请号：US18323317

申请日：2023-05-24

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Vincenzo ENEA

IPC: H01L29/417 ,  H01L29/10 ,  H01L29/78 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/308 ,  H01L29/40

CPC classification number: H01L29/41775 ,  H01L29/41741 ,  H01L29/1095 ,  H01L29/7813 ,  H01L29/6656 ,  H01L29/66719 ,  H01L29/66734 ,  H01L21/3065 ,  H01L21/3086 ,  H01L29/66727 ,  H01L29/407 ,  H01L29/41766 ,  H01L21/266

Abstract: A MOS transistor, in particular a vertical channel transistor, includes a semiconductor body housing a body region, a source region, a drain electrode and gate electrodes. The gate electrodes extend in corresponding recesses which are symmetrical with respect to an axis of symmetry of the semiconductor body. The transistor also has spacers which are also symmetrical with respect to the axis of symmetry. A source electrode extends in electrical contact with the source region at a surface portion of the semiconductor body surrounded by the spacers and is in particular adjacent to the spacers. During manufacture the spacers are used to form in an auto-aligning way the source electrode which is symmetrical with respect to the axis of symmetry and equidistant from the gate electrodes.

公开(公告)号：US20230268421A1

公开(公告)日：2023-08-24

申请号：US18168509

申请日：2023-02-13

Applicant: STMICROELECTRONICS S.r.l. ,  STMICROELECTRONICS PTE LTD

Inventor： Vincenzo ENEA ,  Voon Cheng NGWAN

IPC: H01L29/66 ,  H01L29/40 ,  H01L29/417 ,  H01L29/78 ,  H01L21/265 ,  H01L21/266

CPC classification number: H01L29/66734 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/7813 ,  H01L21/26513 ,  H01L21/266 ,  H01L29/66727

Abstract: A MOS transistor of vertical-conduction, trench-gate, type, including a first and a second spacer adjacent to portions of a gate oxide of the trench-gate protruding from a semiconductor substrate, the first and second spacers being specular to one another with respect to an axis of symmetry; enriched P+ regions are formed by implanting dopant species within the body regions using the spacers as implant masks. The formation of symmetrical spacers makes it possible to form source, body and body-enriched regions that are auto-aligned with the gate electrode, overcoming the limitations of MOS transistors of the known type in which such regions are formed by means of photolithographic techniques (with a consequent risk of asymmetry).

公开(公告)号：US20200083337A1

公开(公告)日：2020-03-12

申请号：US16684066

申请日：2019-11-14

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Vincenzo ENEA

IPC: H01L29/417 ,  H01L29/66 ,  H01L21/308 ,  H01L21/3065 ,  H01L29/78 ,  H01L29/10 ,  H01L29/40

Abstract: A MOS transistor, in particular a vertical channel transistor, includes a semiconductor body housing a body region, a source region, a drain electrode and gate electrodes. The gate electrodes extend in corresponding recesses which are symmetrical with respect to an axis of symmetry of the semiconductor body. The transistor also has spacers which are also symmetrical with respect to the axis of symmetry. A source electrode extends in electrical contact with the source region at a surface portion of the semiconductor body surrounded by the spacers and is in particular adjacent to the spacers. During manufacture the spacers are used to form in an auto-aligning way the source electrode which is symmetrical with respect to the axis of symmetry and equidistant from the gate electrodes.

公开(公告)号：US20210273066A1

公开(公告)日：2021-09-02

申请号：US17322514

申请日：2021-05-17

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Vincenzo ENEA

IPC: H01L29/417 ,  H01L29/10 ,  H01L29/78 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/308 ,  H01L29/40

Abstract: A MOS transistor, in particular a vertical channel transistor, includes a semiconductor body housing a body region, a source region, a drain electrode and gate electrodes. The gate electrodes extend in corresponding recesses which are symmetrical with respect to an axis of symmetry of the semiconductor body. The transistor also has spacers which are also symmetrical with respect to the axis of symmetry. A source electrode extends in electrical contact with the source region at a surface portion of the semiconductor body surrounded by the spacers and is in particular adjacent to the spacers. During manufacture the spacers are used to form in an auto-aligning way the source electrode which is symmetrical with respect to the axis of symmetry and equidistant from the gate electrodes.

公开(公告)号：US20200373397A1

公开(公告)日：2020-11-26

申请号：US16990606

申请日：2020-08-11

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Vincenzo ENEA

IPC: H01L29/417 ,  H01L29/10 ,  H01L29/78 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/308 ,  H01L29/40

Abstract: A MOS transistor, in particular a vertical channel transistor, includes a semiconductor body housing a body region, a source region, a drain electrode and gate electrodes. The gate electrodes extend in corresponding recesses which are symmetrical with respect to an axis of symmetry of the semiconductor body. The transistor also has spacers which are also symmetrical with respect to the axis of symmetry. A source electrode extends in electrical contact with the source region at a surface portion of the semiconductor body surrounded by the spacers and is in particular adjacent to the spacers. During manufacture the spacers are used to form in an auto-aligning way the source electrode which is symmetrical with respect to the axis of symmetry and equidistant from the gate electrodes.

公开(公告)号：US20180342593A1

公开(公告)日：2018-11-29

申请号：US15986181

申请日：2018-05-22

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Vincenzo ENEA

IPC: H01L29/417 ,  H01L29/10 ,  H01L29/78 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L29/41775 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/3065 ,  H01L21/3086 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/6656 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7813

Abstract: A MOS transistor, in particular a vertical channel transistor, includes a semiconductor body housing a body region, a source region, a drain electrode and gate electrodes. The gate electrodes extend in corresponding recesses which are symmetrical with respect to an axis of symmetry of the semiconductor body. The transistor also has spacers which are also symmetrical with respect to the axis of symmetry. A source electrode extends in electrical contact with the source region at a surface portion of the semiconductor body surrounded by the spacers and is in particular adjacent to the spacers. During manufacture the spacers are used to form in an auto-aligning way the source electrode which is symmetrical with respect to the axis of symmetry and equidistant from the gate electrodes.