公开(公告)号：US20230246086A1

公开(公告)日：2023-08-03

申请号：US18156120

申请日：2023-01-18

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Ferdinando IUCOLANO ,  Raffaella LO NIGRO ,  Emanuela SCHILIRÒ ,  Fabrizio ROCCAFORTE

IPC: H01L29/51 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L21/02 ,  H01L21/28 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/513 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/28185 ,  H01L29/205 ,  H01L29/401 ,  H01L29/517 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/66462

Abstract: The present disclosure is directed to a wide band gap transistor that includes a semiconductor structure, having at least one wide band gap semiconductor layer of gallium nitride or silicon carbide, an insulating gate structure and a gate electrode, separated from the semiconductor structure by the insulating gate structure. The insulating gate structure contains a mixture of aluminum, hafnium and oxygen.