公开(公告)号：US20140346588A1

公开(公告)日：2014-11-27

申请号：US14283045

申请日：2014-05-20

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Giuseppe MORALE ,  Carlo MAGRO ,  Domenico MURABITO ,  Tiziana CUSCANI

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02

CPC classification number: H01L29/1095 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02639 ,  H01L21/3247 ,  H01L29/0634 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813

Abstract: A method for manufacturing a semiconductor power device, comprising the steps of: forming a trench in a semiconductor body having a first type of conductivity; partially filling the trench with semiconductor material via epitaxial growth so as to obtain a first column having a second type of conductivity and having an internal cavity. The epitaxial growth includes simultaneously supplying a gas containing dopant ions of the second type of conductivity, hydrochloric acid HCl in gaseous form and dichlorosilane DCS in gaseous form, so that the ratio between the amount of HCl and the amount of DCS has a value of from 3.5 to 5.5.

Abstract translation: 一种制造半导体功率器件的方法，包括以下步骤：在具有第一类导电性的半导体本体中形成沟槽; 通过外延生长部分地用半导体材料填充沟槽，以便获得具有第二类导电性并具有内腔的第一柱。 外延生长包括同时供应气体中含有第二类导电性掺杂离子的气体，气态形式的盐酸HCl和气态的二氯硅烷DCS，使得HCl与DCS的量之间的比值为 3.5至5.5。