公开(公告)号：US20230170271A1

公开(公告)日：2023-06-01

申请号：US18056104

申请日：2022-11-16

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Valeria PUGLISI ,  Gabriele BELLOCCHI ,  Simone RASCUNA'

IPC: H01L23/31 ,  H01L29/16 ,  H01L21/04

CPC classification number: H01L23/3178 ,  H01L29/1608 ,  H01L21/045

Abstract: An electronic device, comprising: a semiconductor body of silicon carbide; an insulating layer on a surface of the semiconductor body; a layer of metal material extending in part on the surface of the semiconductor body and in part on the insulating layer; a SiN interface layer on the layer of metal material and the insulating layer; a passivation layer on the interface layer; and an anchoring element that protrudes from the passivation layer towards the first insulating layer and extends in the first insulating layer underneath the interface layer.

公开(公告)号：US20230170390A1

公开(公告)日：2023-06-01

申请号：US17941788

申请日：2022-09-09

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone RASCUNA' ,  Valeria PUGLISI ,  Gabriele BELLOCCHI

IPC: H01L29/16 ,  H01L29/872 ,  H01L29/20

CPC classification number: H01L29/1608 ,  H01L29/872 ,  H01L29/2003

Abstract: An electronic device comprising: a semiconductor body of silicon carbide; a first insulating layer on a first surface of the semiconductor body, of a first material with electrical-insulator or dielectric characteristics; a first layer of metal material extending in part on the first surface of the semiconductor body and in part on the first insulating layer; an interface layer on the first layer of metal material and on the first insulating layer, of a second material different from the first material; and a passivation layer of the first material on the interface layer. The first material is silicon oxide, and the second material is silicon nitride.