公开(公告)号：US20220108975A1

公开(公告)日：2022-04-07

申请号：US17492356

申请日：2021-10-01

Applicant: STMICROELECTRONICS S.r.l. ,  STMICROELECTRONICS S.r.l.

Inventor： Cristina MANOLA ,  Rosa Lucia TORRISI ,  Simone RASCUNÀ ,  Gabriele BELLOCCHI ,  Annalinda CONTINO ,  Giuseppe MACCARRONE

IPC: H01L23/00 ,  H01L23/495 ,  B22F9/24 ,  B22F1/00

Abstract: The disclosure is directed to wide band-gap semiconductor devices, such as power devices based on silicon carbide or gallium nitride materials. A power device die is attached to a carrier substrate or a base using sintered silver as a die attachment material or layer. The carrier substrate is, in some embodiments, copper plated with silver. The sintered silver die attachment layer is formed by sintering silver nanoparticle paste under a very low temperature, for example, lower than 200° C. and in some embodiments at about 150° C., and with no external pressures applied in the sintering process. The silver nanoparticle is synthesized through a chemical reduction process in an organic solvent. After the reduction process has completed, the organic solvent is removed through evaporation with a flux of inert gas being injected into the solution.

公开(公告)号：US20230299173A1

公开(公告)日：2023-09-21

申请号：US18180680

申请日：2023-03-08

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone RASCUNA' ,  Fabrizio ROCCAFORTE ,  Gabriele BELLOCCHI ,  Marilena VIVONA

IPC: H01L29/66 ,  H01L29/16 ,  H01L29/872 ,  H01L29/868 ,  H01L21/04 ,  H01L21/268 ,  H01L21/263 ,  H01L29/40

CPC classification number: H01L29/6606 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/2636 ,  H01L21/268 ,  H01L29/1608 ,  H01L29/401 ,  H01L29/868 ,  H01L29/872

Abstract: Method for manufacturing an electronic device, comprising the steps of: forming, at a front side of a solid body of 4H-SiC having a first electrical conductivity, at least one implanted region having a second electrical conductivity opposite to the first electrical conductivity; forming, on the front side, a 3C-SiC layer; and forming, in the 3C-SiC layer, an ohmic contact region which extends through the entire thickness of the 3C-SiC layer, up to reaching the implanted region. A silicon layer may be present on the 3C-SiC layer; in this case, the ohmic contact also extends through the silicon layer.

公开(公告)号：US20230170390A1

公开(公告)日：2023-06-01

申请号：US17941788

申请日：2022-09-09

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone RASCUNA' ,  Valeria PUGLISI ,  Gabriele BELLOCCHI

IPC: H01L29/16 ,  H01L29/872 ,  H01L29/20

CPC classification number: H01L29/1608 ,  H01L29/872 ,  H01L29/2003

Abstract: An electronic device comprising: a semiconductor body of silicon carbide; a first insulating layer on a first surface of the semiconductor body, of a first material with electrical-insulator or dielectric characteristics; a first layer of metal material extending in part on the first surface of the semiconductor body and in part on the first insulating layer; an interface layer on the first layer of metal material and on the first insulating layer, of a second material different from the first material; and a passivation layer of the first material on the interface layer. The first material is silicon oxide, and the second material is silicon nitride.

公开(公告)号：US20210328023A1

公开(公告)日：2021-10-21

申请号：US17226003

申请日：2021-04-08

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Simone RASCUNÁ ,  Paolo BADALÁ ,  Anna BASSI ,  Gabriele BELLOCCHI

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/872

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

公开(公告)号：US20250022919A1

公开(公告)日：2025-01-16

申请号：US18781808

申请日：2024-07-23

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNÀ ,  Paolo BADALÀ ,  Anna BASSI ,  Gabriele BELLOCCHI

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/872

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

公开(公告)号：US20240079237A1

公开(公告)日：2024-03-07

申请号：US18363349

申请日：2023-08-01

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Mario Giuseppe SAGGIO ,  Cateno Marco CAMALLERI ,  Gabriele BELLOCCHI ,  Simone RASCUNA'

IPC: H01L21/04 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L21/0485 ,  H01L29/401 ,  H01L29/66068

Abstract: Method of manufacturing an electronic device, comprising forming an ohmic contact at an implanted region of a semiconductor body. Forming the ohmic contact provides for performing a high-temperature thermal process for allowing a reaction between a metal material and the material of the semiconductor body, for forming a silicide of the metal material. The step of forming the ohmic contact is performed prior to a step of forming one or more electrical structures which include materials that may be damaged by the high temperature of the thermal process of forming the silicide.

公开(公告)号：US20230170271A1

公开(公告)日：2023-06-01

申请号：US18056104

申请日：2022-11-16

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Valeria PUGLISI ,  Gabriele BELLOCCHI ,  Simone RASCUNA'

IPC: H01L23/31 ,  H01L29/16 ,  H01L21/04

CPC classification number: H01L23/3178 ,  H01L29/1608 ,  H01L21/045

Abstract: An electronic device, comprising: a semiconductor body of silicon carbide; an insulating layer on a surface of the semiconductor body; a layer of metal material extending in part on the surface of the semiconductor body and in part on the insulating layer; a SiN interface layer on the layer of metal material and the insulating layer; a passivation layer on the interface layer; and an anchoring element that protrudes from the passivation layer towards the first insulating layer and extends in the first insulating layer underneath the interface layer.

公开(公告)号：US20230298887A1

公开(公告)日：2023-09-21

申请号：US18181415

申请日：2023-03-09

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Gabriele BELLOCCHI ,  Simone RASCUNA' ,  Paolo BADALA' ,  Anna BASSI

IPC: H01L21/02 ,  H01L21/306

CPC classification number: H01L21/02378 ,  H01L21/02675 ,  H01L21/30604 ,  H01L21/02164 ,  H01L21/02527

Abstract: Process for manufacturing a 3C-SiC layer, comprising the steps of: providing a wafer of 4H-SiC, provided with a surface; heating, through a LASER beam, a selective portion of the wafer at least up to a melting temperature of the material of the selective portion; allowing the cooling and crystallization of the melted selective portion, thus forming the 3C-SiC layer, a Silicon layer on the 3C-SiC layer and a carbon-rich layer above the Silicon layer; completely removing the carbon-rich layer and the Silicon layer, exposing the 3C-SiC layer. If the Silicon layer is maintained on the 4H-SiC wafer, the process leads to the formation of a Silicon layer on the 4H-SiC wafer. The 3C-SiC or Silicon layer thus formed may be used for the integration, even only partial, of electrical or electronic components.

公开(公告)号：US20230282757A1

公开(公告)日：2023-09-07

申请号：US18181409

申请日：2023-03-09

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone RASCUNÁ ,  Gabriele BELLOCCHI ,  Paolo BADALÁ ,  Isodiana CRUPI

IPC: H01L31/101 ,  H01L31/0224 ,  H01L31/103 ,  H01L31/18

CPC classification number: H01L31/1016 ,  H01L31/022408 ,  H01L31/022466 ,  H01L31/103 ,  H01L31/1812 ,  H01L31/1864 ,  H01L31/1884

Abstract: A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.

公开(公告)号：US20210399154A1

公开(公告)日：2021-12-23

申请号：US17344558

申请日：2021-06-10

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Simone RASCUNÁ ,  Gabriele BELLOCCHI ,  Paolo BADALÁ ,  Isodiana CRUPI

IPC: H01L31/101 ,  H01L31/103 ,  H01L31/0224 ,  H01L31/18

Abstract: A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.