公开(公告)号：US20230170390A1

公开(公告)日：2023-06-01

申请号：US17941788

申请日：2022-09-09

申请人： STMICROELECTRONICS S.r.l.

发明人： Simone RASCUNA' ,  Valeria PUGLISI ,  Gabriele BELLOCCHI

IPC分类号： H01L29/16 ,  H01L29/872 ,  H01L29/20

CPC分类号： H01L29/1608 ,  H01L29/872 ,  H01L29/2003

摘要： An electronic device comprising: a semiconductor body of silicon carbide; a first insulating layer on a first surface of the semiconductor body, of a first material with electrical-insulator or dielectric characteristics; a first layer of metal material extending in part on the first surface of the semiconductor body and in part on the first insulating layer; an interface layer on the first layer of metal material and on the first insulating layer, of a second material different from the first material; and a passivation layer of the first material on the interface layer. The first material is silicon oxide, and the second material is silicon nitride.

公开(公告)号：US20240203737A1

公开(公告)日：2024-06-20

申请号：US18395174

申请日：2023-12-22

申请人： STMICROELECTRONICS S.r.l.

发明人： Simone RASCUNA' ,  Mario Giuseppe SAGGIO

IPC分类号： H01L21/04 ,  H01L29/16 ,  H01L29/66

CPC分类号： H01L21/045 ,  H01L29/1608 ,  H01L29/66053

摘要： A manufacturing method of an anchorage element of a passivation layer, comprising: forming, in a semiconductor body made of SiC and at a distance from a top surface of the semiconductor body, a first implanted region having, along a first axis, a first maximum dimension; forming, in the semiconductor body, a second implanted region, which is superimposed to the first implanted region and has, along the first axis, a second maximum dimension smaller than the first maximum dimension; carrying out a process of thermal oxidation of the first implanted region and second implanted region to form an oxidized region; removing said oxidized region to form a cavity; and forming, on the top surface, the passivation layer protruding into the cavity to form said anchorage element fixing the passivation layer to the semiconductor body.

公开(公告)号：US20230299173A1

公开(公告)日：2023-09-21

申请号：US18180680

申请日：2023-03-08

申请人： STMICROELECTRONICS S.r.l.

发明人： Simone RASCUNA' ,  Fabrizio ROCCAFORTE ,  Gabriele BELLOCCHI ,  Marilena VIVONA

IPC分类号： H01L29/66 ,  H01L29/16 ,  H01L29/872 ,  H01L29/868 ,  H01L21/04 ,  H01L21/268 ,  H01L21/263 ,  H01L29/40

CPC分类号： H01L29/6606 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/2636 ,  H01L21/268 ,  H01L29/1608 ,  H01L29/401 ,  H01L29/868 ,  H01L29/872

摘要： Method for manufacturing an electronic device, comprising the steps of: forming, at a front side of a solid body of 4H-SiC having a first electrical conductivity, at least one implanted region having a second electrical conductivity opposite to the first electrical conductivity; forming, on the front side, a 3C-SiC layer; and forming, in the 3C-SiC layer, an ohmic contact region which extends through the entire thickness of the 3C-SiC layer, up to reaching the implanted region. A silicon layer may be present on the 3C-SiC layer; in this case, the ohmic contact also extends through the silicon layer.

公开(公告)号：US20220384662A1

公开(公告)日：2022-12-01

申请号：US17818926

申请日：2022-08-10

申请人： STMICROELECTRONICS S.R.L.

发明人： Simone RASCUNA' ,  Mario Giuseppe SAGGIO

IPC分类号： H01L29/872 ,  H01L29/06 ,  H01L29/16 ,  H01L29/20 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66

摘要： A merged-PN-Schottky, MPS, diode includes an N substrate, an N-drift layer, a P-doped region in the drift layer, an ohmic contact on the P-doped region, a plurality of cells within the P-doped region and being portions of the drift layer where the P-doped region is absent, an anode metallization on the ohmic contact and on said cells, to form junction-barrier contacts and Schottky contacts respectively. The P-doped region has a grid-shaped layout separating from one another each cell and defining, together with the cells, an active area of the MPS diode. Each cell has a same geometry among quadrangular, quadrangular with rounded corners and circular; and the ohmic contact extends at the doped region with continuity along the grid-shaped layout.

公开(公告)号：US20200235248A1

公开(公告)日：2020-07-23

申请号：US16841536

申请日：2020-04-06

申请人： STMICROELECTRONICS S.R.L.

发明人： Mario Giuseppe SAGGIO ,  Simone RASCUNA'

IPC分类号： H01L29/872 ,  H01L29/66 ,  H01L23/535 ,  H01L21/768 ,  H01L21/225 ,  H01L29/16 ,  H01L29/06 ,  H01L29/417

摘要： A switching device including: a body of semiconductor material, which has a first conductivity type and is delimited by a front surface; a contact layer of a first conductive material, which extends in contact with the front surface; and a plurality of buried regions, which have a second conductivity type and are arranged within the semiconductor body, at a distance from the contact layer.

公开(公告)号：US20240162040A1

公开(公告)日：2024-05-16

申请号：US18509043

申请日：2023-11-14

申请人： STMICROELECTRONICS S.r.l.

发明人： Edoardo ZANETTI ,  Simone RASCUNA' ,  Mario Giuseppe SAGGIO ,  Alfio GUARNERA ,  Leonardo FRAGAPANE ,  Cristina TRINGALI

IPC分类号： H01L21/04 ,  H01L21/285 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/872

CPC分类号： H01L21/046 ,  H01L21/0495 ,  H01L21/28537 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66143 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725

摘要： A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

公开(公告)号：US20230411158A1

公开(公告)日：2023-12-21

申请号：US18459273

申请日：2023-08-31

申请人： STMicroelectronics S.r.l.

发明人： Simone RASCUNA' ,  Paolo BADALA' ,  Anna BASSI ,  Mario Giuseppe SAGGIO ,  Giovanni FRANCO

IPC分类号： H01L21/04 ,  H01L29/16 ,  H01L29/45 ,  H01L29/47

CPC分类号： H01L21/0485 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/47

摘要： A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.

公开(公告)号：US20230298887A1

公开(公告)日：2023-09-21

申请号：US18181415

申请日：2023-03-09

申请人： STMICROELECTRONICS S.r.l.

发明人： Gabriele BELLOCCHI ,  Simone RASCUNA' ,  Paolo BADALA' ,  Anna BASSI

IPC分类号： H01L21/02 ,  H01L21/306

CPC分类号： H01L21/02378 ,  H01L21/02675 ,  H01L21/30604 ,  H01L21/02164 ,  H01L21/02527

摘要： Process for manufacturing a 3C-SiC layer, comprising the steps of: providing a wafer of 4H-SiC, provided with a surface; heating, through a LASER beam, a selective portion of the wafer at least up to a melting temperature of the material of the selective portion; allowing the cooling and crystallization of the melted selective portion, thus forming the 3C-SiC layer, a Silicon layer on the 3C-SiC layer and a carbon-rich layer above the Silicon layer; completely removing the carbon-rich layer and the Silicon layer, exposing the 3C-SiC layer. If the Silicon layer is maintained on the 4H-SiC wafer, the process leads to the formation of a Silicon layer on the 4H-SiC wafer. The 3C-SiC or Silicon layer thus formed may be used for the integration, even only partial, of electrical or electronic components.

公开(公告)号：US20210249268A1

公开(公告)日：2021-08-12

申请号：US17244393

申请日：2021-04-29

申请人： STMICROELECTRONICS S.r.l.

发明人： Edoardo ZANETTI ,  Simone RASCUNA' ,  Mario Giuseppe SAGGIO ,  Alfio GUARNERA ,  Leonardo FRAGAPANE ,  Cristina TRINGALI

IPC分类号： H01L21/04 ,  H01L21/285 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/16 ,  H01L29/872

摘要： A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

公开(公告)号：US20190214509A1

公开(公告)日：2019-07-11

申请号：US16357186

申请日：2019-03-18

申请人： STMICROELECTRONICS S.R.L.

发明人： Mario Giuseppe SAGGIO ,  Simone RASCUNA'

IPC分类号： H01L29/872 ,  H01L29/66 ,  H01L29/06 ,  H01L29/417 ,  H01L29/16 ,  H01L23/535 ,  H01L21/768 ,  H01L21/225

CPC分类号： H01L29/872 ,  H01L21/2253 ,  H01L21/76897 ,  H01L23/535 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/6606 ,  H01L29/66143

摘要： A switching device including: a body of semiconductor material, which has a first conductivity type and is delimited by a front surface; a contact layer of a first conductive material, which extends in contact with the front surface; and a plurality of buried regions, which have a second conductivity type and are arranged within the semiconductor body, at a distance from the contact layer.