公开(公告)号：US20200286883A1

公开(公告)日：2020-09-10

申请号：US16806257

申请日：2020-03-02

Applicant: STMicroelectronics (Tours) SAS ,  STMicroelectronics S.r.l.

Inventor： Jean-Michel SIMONNET ,  Sophie NGO ,  Simone RASCUNÀ

IPC: H01L27/02 ,  H02H9/04 ,  H01L29/16 ,  H01L29/04 ,  H01L29/20 ,  H01L29/868 ,  H01L29/417

Abstract: Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes a first diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.

公开(公告)号：US20240194666A1

公开(公告)日：2024-06-13

申请号：US18444494

申请日：2024-02-16

Applicant: STMICROELECTRONICS S.r.l. ,  STMICROELECTRONICS (TOURS) SAS

Inventor： Jean-Michel SIMONNET ,  Sophie NGO ,  Simone RASCUNÀ

IPC: H01L27/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/20 ,  H01L29/417 ,  H01L29/868 ,  H02H9/04

CPC classification number: H01L27/0255 ,  H01L29/04 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/868 ,  H02H9/046

Abstract: Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes a first diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.