公开(公告)号：US20240194666A1

公开(公告)日：2024-06-13

申请号：US18444494

申请日：2024-02-16

Applicant: STMICROELECTRONICS S.r.l. ,  STMICROELECTRONICS (TOURS) SAS

Inventor： Jean-Michel SIMONNET ,  Sophie NGO ,  Simone RASCUNÀ

IPC: H01L27/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/20 ,  H01L29/417 ,  H01L29/868 ,  H02H9/04

CPC classification number: H01L27/0255 ,  H01L29/04 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/868 ,  H02H9/046

Abstract: Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes a first diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.

公开(公告)号：US20200286883A1

公开(公告)日：2020-09-10

申请号：US16806257

申请日：2020-03-02

Applicant: STMicroelectronics (Tours) SAS ,  STMicroelectronics S.r.l.

Inventor： Jean-Michel SIMONNET ,  Sophie NGO ,  Simone RASCUNÀ

IPC: H01L27/02 ,  H02H9/04 ,  H01L29/16 ,  H01L29/04 ,  H01L29/20 ,  H01L29/868 ,  H01L29/417

Abstract: Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes a first diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.

公开(公告)号：US20220108975A1

公开(公告)日：2022-04-07

申请号：US17492356

申请日：2021-10-01

Applicant: STMICROELECTRONICS S.r.l. ,  STMICROELECTRONICS S.r.l.

Inventor： Cristina MANOLA ,  Rosa Lucia TORRISI ,  Simone RASCUNÀ ,  Gabriele BELLOCCHI ,  Annalinda CONTINO ,  Giuseppe MACCARRONE

IPC: H01L23/00 ,  H01L23/495 ,  B22F9/24 ,  B22F1/00

Abstract: The disclosure is directed to wide band-gap semiconductor devices, such as power devices based on silicon carbide or gallium nitride materials. A power device die is attached to a carrier substrate or a base using sintered silver as a die attachment material or layer. The carrier substrate is, in some embodiments, copper plated with silver. The sintered silver die attachment layer is formed by sintering silver nanoparticle paste under a very low temperature, for example, lower than 200° C. and in some embodiments at about 150° C., and with no external pressures applied in the sintering process. The silver nanoparticle is synthesized through a chemical reduction process in an organic solvent. After the reduction process has completed, the organic solvent is removed through evaporation with a flux of inert gas being injected into the solution.

公开(公告)号：US20250022919A1

公开(公告)日：2025-01-16

申请号：US18781808

申请日：2024-07-23

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNÀ ,  Paolo BADALÀ ,  Anna BASSI ,  Gabriele BELLOCCHI

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/872

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.