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1.发明申请Focused ion beam treatment method and semiconductor device suitable for its implementation 有权聚焦离子束处理方法和半导体器件适用于其实施公开(公告)号：US20040266072A1
公开(公告)日：2004-12-30
申请号：US10782724
申请日：2004-02-19
Applicant: STMICROELECTRONICS SA
Inventor： Thierry Parrassin
IPC: H01L021/26 , H01L021/00 , H01L021/337 , H01L021/84 , H01L021/42 , H01L021/324 , H01L021/477
CPC classification number: H01L23/60 , H01L21/76892 , H01L23/5256 , H01L2924/0002 , H01L2924/00
Abstract: A buried oxide layer of an SOI substrate beneath a structure electrically isolated from the rest of a semiconductor device is made to break down so as to open a bias path for the substrate through the structure. It then suffices to connect the electrical ground of the semiconductor device to this bias path so that the ions flow away into the substrate during a focused ion beam treatment of the semiconductor device.
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