公开(公告)号：US20040266072A1

公开(公告)日：2004-12-30

申请号：US10782724

申请日：2004-02-19

申请人： STMICROELECTRONICS SA

发明人： Thierry Parrassin

IPC分类号： H01L021/26 ,  H01L021/00 ,  H01L021/337 ,  H01L021/84 ,  H01L021/42 ,  H01L021/324 ,  H01L021/477

CPC分类号： H01L23/60 ,  H01L21/76892 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： A buried oxide layer of an SOI substrate beneath a structure electrically isolated from the rest of a semiconductor device is made to break down so as to open a bias path for the substrate through the structure. It then suffices to connect the electrical ground of the semiconductor device to this bias path so that the ions flow away into the substrate during a focused ion beam treatment of the semiconductor device.

公开(公告)号：US20040082138A1

公开(公告)日：2004-04-29

申请号：US10278965

申请日：2002-10-23

发明人： Lin Wen-Chin ,  Denny D. Tang ,  Tsing-Tyan Yang ,  David Jeng

IPC分类号： H01L021/76 ,  H01L021/324 ,  H01L021/477

CPC分类号： H01L21/266

摘要： A method of forming a mask for bombardment of a semiconductor substrate with high energy particles and a mask formed thereby are provided. A patterned layer of a blocking material is formed over a mask substrate to define a high energy particle bombardment mask pattern. The blocking material has sufficient thickness in the mask pattern to substantially shield the semiconductor substrate from selected high energy particles in areas overlapped by the mask pattern when the mask is aligned over the semiconductor substrate. The mask includes a mask substrate having a patterned layer of blocking material formed thereon to define a high energy particle bombardment mask pattern. The blocking material has sufficient thickness in the mask pattern to substantially shield the semiconductor substrate from selected high energy particles in areas of the semiconductor substrate overlapped by the mask pattern when the mask is aligned over the semiconductor substrate.

摘要翻译： 提供了形成用于轰击具有高能量粒子的半导体衬底和由其形成的掩模的掩模的方法。 在掩模衬底上形成阻挡材料的图案层以限定高能量粒子轰击掩模图案。 当掩模在半导体衬底上对准时，阻挡材料在掩模图案中具有足够的厚度，以在与掩模图案重叠的区域中基本上屏蔽半导体衬底中的选定高能粒子。 掩模包括具有形成在其上以形成高能粒子轰击掩模图案的阻挡材料的图案化层的掩模基板。 当掩模在半导体衬底上对准时，阻挡材料在掩模图案中具有足够的厚度，以在半导体衬底与掩模图案重叠的区域中基本上屏蔽半导体衬底上的选定高能粒子。

公开(公告)号：US20040077134A1

公开(公告)日：2004-04-22

申请号：US10650046

申请日：2003-08-28

发明人： Toru Takayama ,  Shunpei Yamazaki ,  Tetsuji Yamaguchi

IPC分类号： H01L021/00 ,  H01L021/324 ,  H01L021/477 ,  H01L021/84

CPC分类号： H01L21/3247 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863

摘要： To apply a technique of forming a dense insulating film with a high quality in a thin film element such as a TFT formed on a glass substrate by eliminating an influence of contraction of the substrate caused by heat treatment in a manufacturing process for the element, and a semiconductor device using the same, which enables high performance and reliability. In a step of forming the thin film element composed of a laminate of plural thin films using the glass substrate, in order to avoid a thermal damage on the substrate, heat treatment is performed such that a coating film for absorbing radiation from a heat source is locally formed in a specific portion of the substrate where the thin film element is to be formed. For the substrate to be applied in the present invention, a raw material low in absorptance with respect to the radiation from the heat source and hard to be heated is adopted. Thus, the heat treatment is performed in such a way that the coating film for absorbing the radiation from the heat source is locally formed on a main surface of the substrate and that a target structure is heated through conductive heating from the coating film.

摘要翻译： 通过消除在元件的制造过程中由热处理引起的基板收缩的影响，在玻璃基板上形成的诸如TFT的薄膜元件（例如TFT）中形成具有高质量的致密绝缘膜的技术，以及 使用该半导体器件的半导体器件能够实现高性能和可靠性。 在使用玻璃基板形成由多层薄膜构成的薄膜元件的步骤中，为了避免对基板的热损伤，进行热处理，使得用于吸收来自热源的辐射的涂膜为 局部形成在要形成薄膜元件的基板的特定部分中。 对于在本发明中应用的基板，采用相对于来自热源的辐射而且难加热的吸收率低的原料。 因此，进行热处理，使得用于吸收来自热源的辐射的涂膜局部地形成在基板的主表面上，并且通过导电加热从涂膜加热目标结构。

公开(公告)号：US20040063333A1

公开(公告)日：2004-04-01

申请号：US10259380

申请日：2002-09-30

申请人： TOKYO ELECTRON LIMITED

发明人： Hidehito Saigusa ,  Taira Takase ,  Kouji Mitsuhashi ,  Hiroyuki Nakayama

IPC分类号： H01L021/44 ,  H01L021/31 ,  H01L021/469 ,  H01L021/26 ,  H01L021/324 ,  H01L021/42 ,  H01L021/477

CPC分类号： H01J37/32431

摘要： The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baffle plate.

公开(公告)号：US20030190823A1

公开(公告)日：2003-10-09

申请号：US10118073

申请日：2002-04-05

发明人： Tony J. Keeton ,  Michael R. Stamp ,  Mark R. Hawkins

IPC分类号： H01L021/31 ,  H01L021/26 ,  H01L021/42 ,  H01L021/477 ,  H01L021/469 ,  H01L021/324

CPC分类号： H01L21/67109 ,  H01L21/67115 ,  H01L21/67748

摘要： One or more of three different measures are taken to preheat a wafer before it is loaded into direct contact with a wafer holder, in order to provide optimal throughput while reducing the risk of thermal shock to the wafer. The first measure is to move the wafer holder to a raised position prior to inserting the wafer into the reaction chamber and holding the wafer above the wafer holder. The second measure is to provide an increased flow rate of a heat-conductive gas (such as Hs purge gas) through the chamber prior to inserting the wafer therein. The third measure is to provide a power bias to radiative heat elements (e.g., heat lamps) above the reaction chamber.

摘要翻译： 在将晶片加载到与晶片保持器直接接触之前，采用三种不同的措施来预热晶片，以便提供最佳的吞吐量，同时降低对晶片的热冲击的风险。 第一个措施是在将晶片插入反应室并将晶片保持在晶片保持器上方之前将晶片保持器移动到升高位置。 第二个措施是在将晶片插入其中之前提供通过腔室的导热气体（例如Hs吹扫气体）的增加的流速。 第三个措施是向反应室上方的辐射热元件（例如，加热灯）提供功率偏压。

公开(公告)号：US20030190822A1

公开(公告)日：2003-10-09

申请号：US09818227

申请日：2001-03-28

发明人： Mamoru Nakasuji

IPC分类号： H01L021/324

CPC分类号： H01J37/28 ,  H01J2237/2817

摘要： Problem: In a pattern size measurement apparatus, there are difference between pattern size measured around the optical axis and that measured at deflection edge. In a defect detection apparatus, the defects that are between raster and around the optical axis may be missed to detect. In an electron beam pattern transfer apparatus, there are pattern size difference between patters formed around the optical axis and that formed at the deflection edge. Means for Resolution: In the pattern size measuring apparatus or the defect detection apparatus, the beam size is adjusted so that everywhere in the deflection field the beam diameter is constant, and then lens excitation is adjusted under focus condition at around the optical axis. In the electron beam pattern transfer apparatus, for the sub field around the optical axis the lens excitation is adjusted so under focus condition that the beam blur at the sub-field around the optical axis is nearly equal to that at the sub field in the deflection edge. As a results pattern size accuracy can be improved.

摘要翻译： 问题：在图案尺寸测量装置中，在光轴周围测量的图案尺寸与在偏转边缘测量的图案尺寸之间存在差异。 在缺陷检测装置中，可能错过光栅与光轴周围的缺陷以进行检测。 在电子束图案转印装置中，在光轴周围形成的图案和形成在偏转边缘的图案之间存在图案尺寸差异。 分辨方法：在图案尺寸测量装置或缺陷检测装置中，调节光束尺寸，使得偏转场中的任何地方的光束直径恒定，然后在聚焦条件下在光轴附近调节透镜激发。 在电子束图案转印装置中，对于围绕光轴的子场，在聚焦条件下调整透镜激发，使得在光轴周围的子场处的光束模糊几乎等于偏转中的子场处的光束模糊 边缘。 作为结果，可以提高图案尺寸精度。

公开(公告)号：US20030155523A1

公开(公告)日：2003-08-21

申请号：US10220364

申请日：2002-08-29

发明人： Ki-Bum Kim

IPC分类号： H01L021/335 ,  H01L021/8232 ,  H01L021/26 ,  H01L021/324 ,  H01L021/42 ,  H01L021/477 ,  G21G005/00 ,  H01J027/00 ,  A61N005/00

CPC分类号： H01J37/3174 ,  B82Y5/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/70408 ,  Y10S430/143

摘要： The present invention relates generally to an apparatus and a method for forming a pattern, and in particular, to an apparatus and a method for forming a pattern for the formation of quantum dots or wires with 1null50 nm dimension using the atomic array of a crystalline material and to the manufacture of functional devices that have such a structure. In the present invention, the functional device means an electronic, magnetic, or optical device that can be fabricated by procedures including the formation process of quantum dots or wires.

摘要翻译： 本发明一般涉及一种用于形成图案的装置和方法，特别涉及一种用于形成用于形成具有1〜50nm尺寸的量子点或线的图案的装置和方法，其使用原子阵列 晶体材料和具有这种结构的功能器件的制造。 在本发明中，功能器件是指可以通过包括量子点或线的形成过程的工艺制造的电子，磁性或光学器件。

公开(公告)号：US20030129773A1

公开(公告)日：2003-07-10

申请号：US10347043

申请日：2003-01-17

发明人： Gurtej S. Sandhu ,  Trung Tri Doan

IPC分类号： H01L021/00 ,  H01L021/26 ,  H01L021/302 ,  H01L021/42 ,  H01L021/8242 ,  H01L021/324 ,  H01L021/477 ,  H01L021/461

CPC分类号： H01L21/02354 ,  H01L21/02164 ,  H01L21/02183 ,  H01L21/268 ,  H01L21/3105 ,  H01L21/31612 ,  H01L28/40

摘要： The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material to increase an oxygen content of the dielectric material. The invention also includes a method of forming a capacitor construction. A first capacitor electrode is formed to be supported by a semiconductor substrate. A dielectric material is formed over the first capacitor electrode. A precursor is provided at a location proximate the dielectric material, and a laser beam is focused at such location. The laser beam generates an activated oxygen species from the precursor. The activated oxygen species contacts the dielectric material. Subsequently, a second capacitor electrode is formed over the dielectric material.

摘要翻译： 本发明包括在半导体晶片上处理主要为无机介电材料的方法。 利用激光产生活性氧物质。 这种活化的氧与电介质材料的组分反应以增加电介质材料的氧含量。 本发明还包括形成电容器结构的方法。 第一电容器电极形成为由半导体衬底支撑。 在第一电容器电极上形成电介质材料。 在靠近介电材料的位置设置前体，并且在这样的位置聚焦激光束。 激光束从前体产生活化的氧物质。 活化的氧物质接触电介质材料。 随后，在电介质材料上形成第二电容器电极。

公开(公告)号：US20030096509A1

公开(公告)日：2003-05-22

申请号：US10299663

申请日：2002-11-20

发明人： Jan J. Dubowski

IPC分类号： H01L021/477 ,  H01L021/324 ,  H01L021/42 ,  H01L021/26 ,  H01L021/331 ,  H01L021/336

CPC分类号： B82Y20/00 ,  H01S5/026 ,  H01S5/2068 ,  H01S5/3413

摘要： To shift the bandgap of a quantum well microstructure, the surface of the microstructure is selectively irradiated in a pattern with ultra violet radiation to induce alteration of a near-surface region of said microstructure. Subsequently the microstructure is annealed to induce quantum well intermixing and thereby cause a bandgap shift dependent on said ultra violet radiation.

公开(公告)号：US20030068903A1

公开(公告)日：2003-04-10

申请号：US09970928

申请日：2001-10-05

发明人： Shinji Suzuki ,  Yoshiki Mimura

IPC分类号： H01L021/26 ,  H01L021/324 ,  H01L021/42 ,  H01L021/477

CPC分类号： H01L21/67115

摘要： To enable uniform heating of the wafer and to carry out heating of the guard ring with high efficiency using lamps of a light source part formed of wafer heating lamps and guard ring heating lamps, the distance between the guard ring heating lamps and the guard ring is made larger than the distance between the wafer heating lamps and the wafer. A side wall is formed with a mirror surface is located between the lamps for wafer heating and the lamps for heating the guard ring by which the light which was emitted from the guard ring heating lamps in the direction toward the wafer are reflected toward the guard ring. Furthermore, at the outer periphery of the guard ring heating lamps, a second side wall is formed which is used as a reflection surface. In addition, at the outer periphery of the guard ring, there is a second mirror by which the light emitted outward of the guard ring is focused back onto the guard ring.

摘要翻译： 为了实现晶片的均匀加热，并且利用由晶圆加热灯和保护环加热灯形成的光源部分的灯来高效率地进行保护环的加热，保护环加热灯与保护环之间的距离为 比晶片加热灯和晶片之间的距离大。 侧壁形成有镜面位于用于晶片加热的灯和用于加热保护环的灯之间，从保护环加热灯沿着朝向晶片的方向发射的光被反射向保护环 。 此外，在保护环加热灯的外周形成用作反射面的第二侧壁。 此外，在保护环的外周，存在第二反射镜，通过该第二反射镜将从保护环向外发射的光聚焦回保护环。