Cyclic epitaxy process to form air gap isolation for a bipolar transistor

    公开(公告)号:US10186605B1

    公开(公告)日:2019-01-22

    申请号:US15783109

    申请日:2017-10-13

    Abstract: A bipolar transistor is supported by a single-crystal silicon substrate including a collector contact region. A cyclical epitaxy process is performed to provide a collector region of a first conductivity type on the collector contact region that is laterally separated from a silicon layer by an air gap. A second epitaxial region forms a base region of a second conductivity type. Deposited semiconductor material forms an emitter region of the first conductivity type. The collector region, base region and emitter region are located within an opening formed in a stack of insulating layers that includes a sacrificial layer. The sacrificial layer is selectively removed to expose a side wall of the base region. Epitaxial growth from the exposed sidewall forms a base contact region.

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