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    INDIRECT TIME-OF-FLIGHT (ITOF) SENSOR
    1.
    发明申请
    INDIRECT TIME-OF-FLIGHT (ITOF) SENSOR 有权

    公开(公告)号：US20220308190A1

    公开(公告)日：2022-09-29

    申请号：US17704481

    申请日：2022-03-25

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Matteo Maria VIGNETTI ,  Pierre MALINGE

    IPC: G01S7/4865

    Abstract: An indirect time-of-flight (iTOF) includes a pixel with a photoconversion area, a readout circuit and at least two circuit sets. Each circuit set includes: a capacitive element connected to a first node of the circuit set; a controllable charge transfer device connected between a first electrode of the photoconversion area and the first node; and a first transistor having a gate connected to the first node, a source connected to the readout circuit and a drain configured to receive a bias potential. The capacitive element is configured to store a voltage in response to charges generated by the photoconversion area.

    IMAGE SENSOR AND METHOD FOR CONTROLLING SAME
    3.
    发明申请
    IMAGE SENSOR AND METHOD FOR CONTROLLING SAME 审中-公开

    公开(公告)号：US20200382738A1

    公开(公告)日：2020-12-03

    申请号：US16890877

    申请日：2020-06-02

    Applicant: STMICROELECTRONICS (GRENOBLE 2) SAS ,  STMICROELECTRONICS (CROLLES 2) SAS

    Inventor： Pierre MALINGE ,  Frederic LALANNE ,  Laurent SIMONY

    IPC: H04N5/3745

    Abstract: An image sensor includes pixels each including: a first transistor and a first switch that are connected in series between a first node configured to receive a first potential and an internal node of the pixel, a gate of the first transistor being coupled with a floating diffusion node of the pixel; a capacitive element, a first terminal of which is connected to the floating diffusion node of the pixel; and several assemblies each including a capacitance connected in series with a second switch coupling the capacitance to the internal node. The sensor also includes a control circuit configured to control, each time a voltage is stored in one of the assemblies of a pixel, an increase of a determined value of a difference in potential between the floating diffusion node and the internal node of the pixel.

    IMAGE SENSOR AND METHOD FOR CONTROLLING SAME
    6.
    发明申请
    IMAGE SENSOR AND METHOD FOR CONTROLLING SAME 审中-公开

    公开(公告)号：US20200382731A1

    公开(公告)日：2020-12-03

    申请号：US16890944

    申请日：2020-06-02

    Applicant: STMICROELECTRONICS (GRENOBLE 2) SAS ,  STMICROELECTRONICS (CROLLES 2) SAS

    Inventor： Laurent SIMONY ,  Pierre MALINGE

    IPC: H04N5/374 ,  H04N5/341 ,  H04N5/355

    Abstract: A sensor includes pixels each including: a first transistor and a first switch in series between a first node and an internal node of the pixel, a gate of the first transistor being coupled to a second node; a capacitive element, a first terminal of which is connected to the second node; and a plurality of assemblies each including a capacitance in series with a second switch coupled to the internal node. The sensor includes a circuit configured to control, each time a voltage is stored in one of the assemblies, the interruption of a current between the first node and the internal node: by switching a first potential applied to a second terminal of the capacitive element; or by opening the first switch.

    PHOTOSENSITIVE SENSOR AND CORRESPONDING OPTICAL SIGNAL ACQUISITION METHOD
    8.
    发明申请
    PHOTOSENSITIVE SENSOR AND CORRESPONDING OPTICAL SIGNAL ACQUISITION METHOD 有权

    公开(公告)号：US20230051181A1

    公开(公告)日：2023-02-16

    申请号：US17883764

    申请日：2022-08-09

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Frederic LALANNE ,  Pierre MALINGE

    IPC: H04N5/343 ,  G01J1/44 ,  H04N5/3745 ,  H04N5/378 ,  H04N5/33

    Abstract: A photosensitive sensor is capable of operating in a global shutter mode and in a rolling shutter mode. The sensor includes at least one pixel with a photosensitive region configured to photogenerate charges. A first transfer gate is configured to transfer photogenerated charges from the photosensitive region to a transfer node. A source-follower transistor is configured to transmit a reading signal to a read node, in the global shutter mode, in a manner controlled by a potential of the photogenerated charges on the transfer node. A second transfer gate is configured to transfer the photogenerated charges from the photosensitive region to the read node in the rolling shutter mode.

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