公开(公告)号：US20230290786A1

公开(公告)日：2023-09-14

申请号：US18118391

申请日：2023-03-07

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Sebastien CREMER ,  Frederic MONSIEUR ,  Alain FLEURY ,  Sebastien HAENDLER

IPC: H01L27/12 ,  H01L21/762 ,  H01L23/48 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L27/1203 ,  H01L21/76264 ,  H01L23/481 ,  H01L23/528 ,  H01L23/53257

Abstract: A device includes an active semiconductor layer on top of and in contact with an insulating layer which overlies a semiconductor substrate. A transistor for the device includes a source region, a drain region, and a body region arranged in the active semiconductor layer. The body region of the transistor is electrically coupled to the semiconductor substrate using a conductive via that crosses through the insulating layer.