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公开(公告)号：US20140040539A1
公开(公告)日：2014-02-06
申请号：US14043270
申请日：2013-10-01
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Hubert Rousseau
IPC: G06F12/02
CPC classification number: G06F3/0619 , G06F3/0604 , G06F3/0616 , G06F3/064 , G06F3/0644 , G06F3/065 , G06F3/0652 , G06F3/0679 , G06F11/1435 , G06F11/1471 , G06F12/0246 , G06F12/0253 , G06F2212/7202 , G06F2212/7205 , G06F2212/7207 , G06F2212/7211 , G11C16/10 , G11C16/105
Abstract: A method for writing and reading data memory cells, comprising: defining in a first memory zone erasable data pages and programmable data blocks; and, in response to write commands of data, writing data in erased blocks of the first memory zone, and writing, in a second memory zone, metadata structures associated with data pages and comprising, for each data page, a wear counter containing a value representative of the number of times that the page has been erased.
Abstract translation: 一种用于写入和读取数据存储单元的方法，包括：在第一存储区中定义可擦除数据页和可编程数据块; 并且响应于数据的写入命令，将数据写入第一存储器区域的擦除块中，以及在第二存储器区域中写入与数据页相关联的元数据结构，并且对于每个数据页包括含有值的磨损计数器 代表页面被删除的次数。
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公开(公告)号：US20140297931A1
公开(公告)日：2014-10-02
申请号：US14300877
申请日：2014-06-10
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Hubert Rousseau
IPC: G06F12/02
CPC classification number: G06F3/0619 , G06F3/0604 , G06F3/0616 , G06F3/064 , G06F3/0644 , G06F3/065 , G06F3/0652 , G06F3/0679 , G06F11/1435 , G06F11/1471 , G06F12/0246 , G06F12/0253 , G06F2212/7202 , G06F2212/7205 , G06F2212/7207 , G06F2212/7211 , G11C16/10 , G11C16/105
Abstract: A method for writing and reading data memory cells, comprising: defining in a first memory zone erasable data pages and programmable data blocks; and, in response to write commands of data, writing data in erased blocks of the first memory zone, and writing, in a second memory zone, metadata structures associated with data pages and comprising, for each data page, a wear counter containing a value representative of the number of times that the page has been erased.
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公开(公告)号：US10261702B2
公开(公告)日：2019-04-16
申请号：US14955511
申请日：2015-12-01
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Hubert Rousseau
Abstract: A method for writing and reading data in memory cells, comprising, when writing a data in a block of a first memory zone, a step consisting of writing in a second memory zone a temporary information structure metadata comprising a start flag, an identifier of the temporary information structure, an information about the location of the block in the first memory zone, and a final flag, and, after a power on of the first memory zone, searching for an anomaly in temporary information structures present in the second memory zone.
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Patent Agency Ranking
公开(公告)号：US09229857B2
公开(公告)日：2016-01-05
申请号：US14734839
申请日：2015-06-09
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Hubert Rousseau
CPC classification number: G06F3/0619 , G06F3/0604 , G06F3/0616 , G06F3/064 , G06F3/0644 , G06F3/065 , G06F3/0652 , G06F3/0679 , G06F11/1435 , G06F11/1471 , G06F12/0246 , G06F12/0253 , G06F2212/7202 , G06F2212/7205 , G06F2212/7207 , G06F2212/7211 , G11C16/10 , G11C16/105
Abstract: A method for writing and reading data memory cells, comprising: defining in a first memory zone erasable data pages and programmable data blocks; and, in response to write commands of data, writing data in erased blocks of the first memory zone, and writing, in a second memory zone, metadata structures associated with data pages and comprising, for each data page, a wear counter containing a value representative of the number of times that the page has been erased.
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公开(公告)号：US20150277788A1
公开(公告)日：2015-10-01
申请号：US14734839
申请日：2015-06-09
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Hubert Rousseau
IPC: G06F3/06
CPC classification number: G06F3/0619 , G06F3/0604 , G06F3/0616 , G06F3/064 , G06F3/0644 , G06F3/065 , G06F3/0652 , G06F3/0679 , G06F11/1435 , G06F11/1471 , G06F12/0246 , G06F12/0253 , G06F2212/7202 , G06F2212/7205 , G06F2212/7207 , G06F2212/7211 , G11C16/10 , G11C16/105
Abstract: A method for writing and reading data memory cells, comprising: defining in a first memory zone erasable data pages and programmable data blocks; and, in response to write commands of data, writing data in erased blocks of the first memory zone, and writing, in a second memory zone, metadata structures associated with data pages and comprising, for each data page, a wear counter containing a value representative of the number of times that the page has been erased.
Abstract translation: 一种用于写入和读取数据存储单元的方法，包括：在第一存储区中定义可擦除数据页和可编程数据块; 并且响应于数据的写入命令，将数据写入第一存储器区域的擦除块中，以及在第二存储器区域中写入与数据页相关联的元数据结构，并且对于每个数据页包括含有值的磨损计数器 代表页面被删除的次数。
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公开(公告)号：US08782338B2
公开(公告)日：2014-07-15
申请号：US14043270
申请日：2013-10-01
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Hubert Rousseau
CPC classification number: G06F3/0619 , G06F3/0604 , G06F3/0616 , G06F3/064 , G06F3/0644 , G06F3/065 , G06F3/0652 , G06F3/0679 , G06F11/1435 , G06F11/1471 , G06F12/0246 , G06F12/0253 , G06F2212/7202 , G06F2212/7205 , G06F2212/7207 , G06F2212/7211 , G11C16/10 , G11C16/105
Abstract: A method for writing and reading data memory cells, comprising: defining in a first memory zone erasable data pages and programmable data blocks; and, in response to write commands of data, writing data in erased blocks of the first memory zone, and writing, in a second memory zone, metadata structures associated with data pages and comprising, for each data page, a wear counter containing a value representative of the number of times that the page has been erased.
Abstract translation: 一种用于写入和读取数据存储单元的方法，包括：在第一存储区中定义可擦除数据页和可编程数据块; 并且响应于数据的写入命令，将数据写入第一存储器区域的擦除块中，以及在第二存储器区域中写入与数据页相关联的元数据结构，并且对于每个数据页包括含有值的磨损计数器 代表页面被删除的次数。
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公开(公告)号：US09081671B2
公开(公告)日：2015-07-14
申请号：US14300877
申请日：2014-06-10
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Hubert Rousseau
CPC classification number: G06F3/0619 , G06F3/0604 , G06F3/0616 , G06F3/064 , G06F3/0644 , G06F3/065 , G06F3/0652 , G06F3/0679 , G06F11/1435 , G06F11/1471 , G06F12/0246 , G06F12/0253 , G06F2212/7202 , G06F2212/7205 , G06F2212/7207 , G06F2212/7211 , G11C16/10 , G11C16/105
Abstract: A method for writing and reading data memory cells, comprising: defining in a first memory zone erasable data pages and programmable data blocks; and, in response to write commands of data, writing data in erased blocks of the first memory zone, and writing, in a second memory zone, metadata structures associated with data pages and comprising, for each data page, a wear counter containing a value representative of the number of times that the page has been erased.
Abstract translation: 一种用于写入和读取数据存储单元的方法，包括：在第一存储区中定义可擦除数据页和可编程数据块; 并且响应于数据的写入命令，将数据写入第一存储器区域的擦除块中，以及在第二存储器区域中写入与数据页相关联的元数据结构，并且对于每个数据页包括含有值的磨损计数器 代表页面被删除的次数。
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公开(公告)号：US20160098220A1
公开(公告)日：2016-04-07
申请号：US14955511
申请日：2015-12-01
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Hubert Rousseau
IPC: G06F3/06
CPC classification number: G06F3/0619 , G06F3/0604 , G06F3/0616 , G06F3/064 , G06F3/0644 , G06F3/065 , G06F3/0652 , G06F3/0679 , G06F11/1435 , G06F11/1471 , G06F12/0246 , G06F12/0253 , G06F2212/7202 , G06F2212/7205 , G06F2212/7207 , G06F2212/7211 , G11C16/10 , G11C16/105
Abstract: A method for writing and reading data in memory cells, comprising, when writing a data in a block of a first memory zone, a step consisting of writing in a second memory zone a temporary information structure metadata comprising a start flag, an identifier of the temporary information structure, an information about the location of the block in the first memory zone, and a final flag, and, after a power on of the first memory zone, searching for an anomaly in temporary information structures present in the second memory zone.
Abstract translation: 一种用于在存储器单元中写入和读取数据的方法，包括当在第一存储区域的块中写入数据时，包括在第二存储器区域中写入包含开始标志的临时信息结构元数据的步骤， 临时信息结构，关于块在第一存储区中的位置的信息和最终标志，以及在第一存储区的通电之后，搜索存在于第二存储区中的临时信息结构中的异常。
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