公开(公告)号：US20040083327A1

公开(公告)日：2004-04-29

申请号：US10623474

申请日：2003-07-18

Applicant: STMicroelectronics S.r.I.

Inventor： Paolino Schillaci ,  Salvatore Poli ,  Antonino La Malfa

IPC: G06F012/00

CPC classification number: G11C8/06 ,  G06F12/0653 ,  G11C15/00

Abstract: The invention relates to an automatic decoding method for mapping and selecting a non-volatile memory device having a LPC serial communication interface in the available addressing area on motherboards. A logic structure is incorporated in the memory device, which allows a correct decoding to address the memory to the top of the addressable area or to the bottom of the same area, i.e., in both possible cases. This logic incorporates a non-volatile register whose information is stored in a Content Address Memory to enable the automatic mapping of the memory in the addressable memory area.

Abstract translation: 本发明涉及一种用于映射和选择在主板上的可用寻址区域中具有LPC串行通信接口的非易失性存储器件的自动解码方法。 逻辑结构被结合在存储器件中，其允许正确的解码将存储器寻址到可寻址区域的顶部或相同区域的底部，即在两种可能的情况下。 该逻辑包含非易失性寄存器，其信息存储在内容地址存储器中，以使得可寻址存储器区域中的存储器自动映射。

公开(公告)号：US20040223361A1

公开(公告)日：2004-11-11

申请号：US10779856

申请日：2004-02-17

Applicant: STMicroelectronics S.r.I.

Inventor： Antonino La Malfa ,  Marco Messina

IPC: G11C011/00

CPC classification number: G11C16/12

Abstract: Described herein is a method for soft-programming an electrically erasable nonvolatile memory device, wherein soft-programming is carried out with a soft-programming multiplicity equal to twice that used for writing data in the memory device until the current absorbed during soft-programming is smaller than or equal to the maximum current which is available for writing operations and which can be generated within the memory device, and with a soft-programming multiplicity equal to the one used for writing data in the memory device in the case where the current absorbed during soft-programming with double multiplicity is greater than the maximum current which is available for writing operations and which can be generated within the memory device.

Abstract translation: 这里描述了一种用于软编程电可擦除非易失性存储器件的方法，其中以软编程多重性等于用于在存储器件中写入数据的两倍的软编程来执行软编程，直到在软编程期间吸收的电流为 小于或等于可用于写入操作并且可以在存储器件内产生的最大电流，并且在电流吸收的情况下具有与用于在存储器件中写入数据的软编程多重性相等的软编程倍数 在具有双重多重性的软编程期间，大于可用于写入操作的最大电流，并且可以在存储器件内生成。